Ultrasensitive Piezoresistive All‐Organic Flexible Thin Films

Laukhina, Elena; Pfattner, Raphael; Ferreras, Lourdes R.; Galli, Simona; Mas‐Torrent, Marta; Masciocchi, Norberto; Laukhin, V. N.; Rovira, Concepció; Veciana, Jaume

doi:10.1002/adma.200902639

Cited by 65 publications

(70 citation statements)

References 19 publications

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“…Among these, piezoresistive pressure sensors [1][2][3][4][5] have scope for use in practical applications for sensing the human body [6][7][8][9][10][11][12], such as all kinds of haptic sensing of the human body [13][14][15][16][17] including haptic sensing of fingers and palms [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Finger and Palm Dynamic Pressure Monitoring for Basketball Shooting

Hung¹,

Chen

Lin³

et al. 2017

Journal of Sensors

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This study verified general inferences on the finger and palm pressure distribution of a basketball player in the moment before that player shoots a basketball through a scientific qualitative testing method. We mounted the sensor on the hands of college basketball players and monitored the dynamic pressure of each player's hand while the player threw a basketball. The dynamic pressure distribution of the fingers and palm of a basketball player throwing a ball can be verified. According to the experimental results, college basketball players typically use the index finger to control the direction and power of force in the moment before shooting a basketball. This study successfully used a scientific qualitative test method to monitor the dynamic pressure of the fingers and palms of basketball players and verified the general inference that a typical basketball player mainly uses the index finger to control the direction and power of force in the moment before throwing a ball. In the future, this study, measuring the dynamic pressure distribution of the fingers and palm, can be applied to simulate hand manipulation in many biomedical and robotic applications.

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Section: Introductionmentioning

confidence: 99%

Finger and Palm Dynamic Pressure Monitoring for Basketball Shooting

Hung¹,

Chen

Lin³

et al. 2017

Journal of Sensors

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“…Indeed, the reversibility of the textile response is maintained for lower ε values compared to the BL film, which responds linear and fully reversible at relative strain values of up to 1 %. 10 This suggests that the intrinsic mechanical properties of the textile composite material are the limiting factor to the maximum applied strain 8 resulting first in a deviation from the linear regime and second ending finally in an irreversible response. This effect is illustrated by SEM images comparing the profile of a textile before and after an irreversible deformation.…”

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confidence: 99%

“…For comparison reasons the experimental data measured for BL films based on the same conducting salt 10 and the typical response of a conventional foil strain gauge based on a Cu-Ni alloy 17 are also included. At glance the plot noticeably illustrates that both composite materials (i.e.…”

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confidence: 99%

“…10 The influence of strain on the electrical resistance of the conducting composite textiles was also investigated. For these experiments small conductive textile pieces of a typical gauge area of about 4.0 x 2.0 mm 2 were subjected to an electromechanical positioning system, with a computer controlled drive system, equipped with two clamps for sample mounting.…”

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confidence: 99%

“…8,9 In the framework of smart organic materials, we recently reported on the extremely sensitive strain sensing properties of bi-layer (BL) films based on a polymeric matrix containing a conducting top-layer of a microcrystalline network of a conducting charge transfer organic salt. 10,11 These BL films exhibited a fast and fully reversible response reaching gauge factors values of [10][11][12][13][14][15][16][17][18][19][20], that are one order of magnitude higher than the most commonly used manganese-based electromechanical sensors. The origin of these sensing capabilities is due to the deformation of the soft crystallites which, in turn, modifies the electronic band structure of the conducting charge transfer salt.…”

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confidence: 99%

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Highly piezoresistive textiles based on a soft conducting charge transfer salt

et al. 2011

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Mercury‐Mediated Organic Semiconductor Surface Doping Monitored by Electrolyte‐Gated Field‐Effect Transistors

Zhang

Leonardi

Casalini

et al. 2017

Adv Funct Materials

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Surface doping allows tuning the electronic structure of semiconductors at near-surface regime and is normally accomplished through the deposition of an ultrathin layer on top or below the host material. Surface doping is particularly appealing in organic field-effect transistors (OFETs) where charge transport takes place at the first monolayers close to the dielectric surface. However, due to fabrication restrictions that OFET architecture imparts, this is extremely challenging. Here, it is demonstrated that mercury cations, Hg 2+ , can be exploited to control doping levels at the top surface of a thin film of a p-type organic semiconductor blended with polystyrene. Electrolyte-or water-gated field-effect transistors, which have its conductive channel at the top surface of the organic thin film, turn out to be a powerful tool for monitoring the process. A positive shift of the threshold voltage is observed in the devices upon Hg 2+ exposure. Remarkably, this interaction has been proved to be specific to Hg 2+ with respect to other divalent cations and sensitive down to nanomolar concentrations. Hence, this work also opens new perspectives for employing organic electronic transducers in portable sensors for the detection of an extremely harmful water pollutant without the need of using specific receptors.

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Ultrasensitive Piezoresistive All‐Organic Flexible Thin Films

Cited by 65 publications

References 19 publications

Finger and Palm Dynamic Pressure Monitoring for Basketball Shooting

Finger and Palm Dynamic Pressure Monitoring for Basketball Shooting

Highly piezoresistive textiles based on a soft conducting charge transfer salt

Mercury‐Mediated Organic Semiconductor Surface Doping Monitored by Electrolyte‐Gated Field‐Effect Transistors

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