2012
DOI: 10.1021/jp305231j
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Ultrasensitive Phototransistor Based on K-Enriched MoO3 Single Nanowires

Abstract: An ultrasensitive phototransistor was fabricated based on K-intercalated MoO3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both thermal-activation and photoactivation mechanisms. The promising results are expected to promote the potential of this material in nano/micro-scaled photoelectronic applications.

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Cited by 33 publications
(21 citation statements)
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“…This R res value is much higher than that of graphene ($1 mA W À1 ), 61 MoS 2 (7.5 mA W À1 ), 22 and organic (PPEs, 36 mA W À1 ) 17 phototransistors. It is even higher than those of ZnO nanowires (1.29 Â 10 7 mA W À1 ) 18 and recently reported K x MoO 3 nanowire phototransistors (1.75 Â 10 7 mA W À1 ) 62 and comparable with vertically aligned Si nanowire arrays ($10 8 mA W À1 ). 63 The high responsivity of the nanowire device enables a large on/off ratio, indicating the potential applications of the nanowire phototransistor in optoelectronic devices such as optoisolators, retrosensors, 16,64 and photoampliers.…”
Section: Resultsmentioning
confidence: 77%
“…This R res value is much higher than that of graphene ($1 mA W À1 ), 61 MoS 2 (7.5 mA W À1 ), 22 and organic (PPEs, 36 mA W À1 ) 17 phototransistors. It is even higher than those of ZnO nanowires (1.29 Â 10 7 mA W À1 ) 18 and recently reported K x MoO 3 nanowire phototransistors (1.75 Â 10 7 mA W À1 ) 62 and comparable with vertically aligned Si nanowire arrays ($10 8 mA W À1 ). 63 The high responsivity of the nanowire device enables a large on/off ratio, indicating the potential applications of the nanowire phototransistor in optoelectronic devices such as optoisolators, retrosensors, 16,64 and photoampliers.…”
Section: Resultsmentioning
confidence: 77%
“…A reasonable photosensitivity as compared to a lot of nanomaterial-based devices was reported in which I light /I dark > 1 × 10 2 under a weak light illumination of 0.018 mW cm −2 . [121][122][123] Moreover, device stability was demonstrated at temperatures up to 100 °C. A very low value of dark current (≈1 × 10 −10 A) at 30 V was shown for this PD and, after illumination with a light power density of 6.59 mW cm −2 , the photocurrent increased by more than 10 000 times compared to that in the dark, confirming that the device works in photoconductor mode.…”
Section: Materials Design: Morphology Effectmentioning
confidence: 99%
“…The high on/off ratio of ≈10 4 with an excellent responsivity of 1.75 × 10 4 A W -1 of the fabricated device confirms the application of intercalated α-MoO 3 as promising phototransistors and light sensors. [159]…”
Section: Photodetectorsmentioning
confidence: 99%