Ultralow power switching of Ta₂O₅/AlO_X bilayer synergistic resistive random access memory

Abstract

In this work, an ultra low power switching is achieved in Ta 2 O 5 -based resistive random access memory (RRAM) device through inserting AlOx film as tunneling layer. After optimizing the thickness of the AlO X layer, the operating current of the device with 15 nm AlO X is reduced to lower than 100 nA with a switching window about 151, and the ultra-low power consumptions of 586 pW and 40.2 nW are achieved for set and reset process, respectively. According to the local conductive filament formation characterization from high-resolution transmission electron microscope and the calculation from Schottky emission formula, a switching mechanism based on the formation of local oxygen vacancies conductive filament in AlO X layer is proposed to explain the ultralow power switching of the Ta 2 O 5 /AlO X bilayer synergistic RRAM device.

Effects of the annealing of amorphous Ta2O5 coatings produced by ion beam sputtering concerning the effusion of argon and the chemical composition

“…Amorphous Ta 2 O 5 is a material with a large variety of applications in electronic circuits [1], quantum technologies [2], gas [3] or molecular sensing [4], enhancement of Raman scattering [5], hydrogen generation activity [6] or hydrophobic activity [7]. Among the physical properties which allow this broad range of applications, the refractive index n~2.1 at 1064 nm is of the highest importance [8].…”

A chemically mediated artificial neuron

“…We expect that biomodification of sensor surface such as aptamers that can enhance the affinity of sensing interface to neurotransmitter can improve the response speed of system. 36 Downscaling of sensor 52 and memristor 53 , and optimization of memristor with multilayer-stacked structures 54 would reduce the energy consumption of system. Selecting energy-efficient electrochemical transistor-based sensors 55 that would eliminate the amplifier can further reduce the energy consumption.…”

Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

“…25 Diverse materials are employed as oxide layers between metal electrodes, with binary metal oxides (such as HfO x , NiO x , AlO x , and TiO x ) being studied in particular. [26][27][28][29][30][31] Of these, HfO x is CMOS compatible and offers many benefits, including a high dielectric constant (∼25) and a wide bandgap (∼6 eV). 32,33 Moreover, HfO x -based RRAM relies on the formation and rupture of conductive filaments, which are produced by the migration of oxygen vacancies within the switching layer.…”