Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Jung, Dae-Won; Kim, Tae-Hyeon; Lee, Jung‐Kyu; Kim, Sung-Joon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun; Cho, Seongjae

doi:10.1039/d3nr01930f

Cited by 9 publications

(1 citation statement)

References 78 publications

(107 reference statements)

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“…Among them, RRAM is one of the most promising candidates for application in neuromorphic computing owing to its high scalability, low-power consumption, increased switching speed, and high-switching versatility. Various materials such as metal-oxide, organic, and two-dimensional (2D) are being investigated for applications in neuromorphic systems to emulate synaptic functions. − In particular, the conductive bridge random access memory (CBRAM), a type of RRAM with a Ag or Cu electrode, has attracted attention owing to the capability of the CBRAM to implement synaptic functions via short- and long-term memory mechanisms based on active metal-ion transitions. − However, active metals have high reactivity and atomic mobility, thus causing diffusion through an insulator or oxidization. These problems result in device performance degradation; consequently, the active metal is not a fab-friendly material in the semiconductor industry.…”

Section: Introductionmentioning

confidence: 99%

Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Lee,

Huang,

Chang

et al. 2024

ACS Nano

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In this study, we investigate the coexistence of short-and long-term memory effects owing to the programmable retention characteristics of a two-dimensional Au/MoS 2 / Au atomristor device and determine the impact of these effects on synaptic properties. This device is constructed using bilayer MoS 2 in a crossbar structure. The presence of both short-and long-term memory characteristics is proposed by using a filament model within the bilayer transition-metal dichalcogenide. Short-and long-term properties are validated based on programmable multilevel retention tests. Moreover, we confirm various synaptic characteristics of the device, demonstrating its potential use as a synaptic device in a neuromorphic system. Excitatory postsynaptic current, paired-pulse facilitation, spikerate-dependent plasticity, and spike-number-dependent plasticity synaptic applications are implemented by operating the device at a low-conductance level. Furthermore, long-term potentiation and depression exhibit symmetrical properties at highconductance levels. Synaptic learning and forgetting characteristics are emulated using programmable retention properties and composite synaptic plasticity. The learning process of artificial neural networks is used to achieve high pattern recognition accuracy, thereby demonstrating the suitability of the use of the device in a neuromorphic system. Finally, the device is used as a physical reservoir with time-dependent inputs to realize reservoir computing by using short-term memory properties. Our study reveals that the proposed device can be applied in artificial intelligence-based computing applications by utilizing its programmable retention properties.

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Section: Introductionmentioning

confidence: 99%

Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Lee,

Huang,

Chang

et al. 2024

ACS Nano

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Sophisticated Conductance Control and Multiple Synapse Functions in TiO₂‐Based Multistack‐Layer Crossbar Array Memristor for High‐Performance Neuromorphic Systems

So,

Ji,

Kim

et al. 2024

Adv Funct Materials

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In this study, oxygen‐rich TiOy and TiOx layers are intentionally designed to have different oxygen compositions, functioning as an overshoot suppression layer (OSL) and oxygen reservoirs. Furthermore, by natural oxidation reactions occurring between the TiOy/TiOx/Al2O3 switching layer and the Pt/Al top electrode, an additional AlOy layer can be induced to act as an additional OSL. The proposed annealing process accelerates the oxidation reaction of AlOy/TiOy OSLs, thereby enhancing the self‐compliance feature of devices. Moreover, the ultrathin AlN serves as an oxygen barrier layer (OBL) that inhibits the movement of oxygen ions at the interface between the Al2O3 layer and the Pt/Ti bottom electrode. The optimized devices are tested by DC sweep and pulses for neuromorphic computing systems. To realize biological synapse characteristics, several key synaptic memory plasticities are proposed. Finally, a 24 × 24 crossbar array based on the 0T‐1R structure, incorporating optimized AlOy/TiOy OSLs and OBL via the annealing process, is characterized. During the electroforming step, all specified target cells (marked with the letters “ESDL”) achieved self‐compliance at low current levels without experiencing hard‐breakdown failures or interference among neighboring cells. The successful array performance is demonstrated by the accurate tuning of target weights.

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On-receptor computing utilizing vertical-structured cost-effective memristor

Ju,

Lee,

Lee

et al. 2024

Journal of Alloys and Compounds

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Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Abstract: Although vertical configurations for high-density storage require challenging process steps, such as etching high aspect ratios and atomic layer deposition (ALD), they are more affordable with a relatively simple lithography...

Cited by 9 publications

References 78 publications

Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Sophisticated Conductance Control and Multiple Synapse Functions in TiO₂‐Based Multistack‐Layer Crossbar Array Memristor for High‐Performance Neuromorphic Systems

On-receptor computing utilizing vertical-structured cost-effective memristor

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Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Abstract: Although vertical configurations for high-density storage require challenging process steps, such as etching high aspect ratios and atomic layer deposition (ALD), they are more affordable with a relatively simple lithography...

Cited by 9 publications

References 78 publications

Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Sophisticated Conductance Control and Multiple Synapse Functions in TiO2‐Based Multistack‐Layer Crossbar Array Memristor for High‐Performance Neuromorphic Systems

On-receptor computing utilizing vertical-structured cost-effective memristor

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Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Sophisticated Conductance Control and Multiple Synapse Functions in TiO₂‐Based Multistack‐Layer Crossbar Array Memristor for High‐Performance Neuromorphic Systems