Ultralow noise field-effect transistor from multilayer graphene

Pal, Atindra Nath; Ghosh, Arindam

doi:10.1063/1.3206658

Cited by 113 publications

(116 citation statements)

References 26 publications

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“…In contrast to Refs. [19,22], we did not observe noticeable difference in the noise amplitude for SLG and BLG devices. One should note though that direct comparison is complicated by differences in devices design (e.g.…”

Section: Noise Measurements Results and Discussionmentioning

confidence: 68%

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Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

Rumyantsev

Liu

Stillman

et al. 2010

J. Phys.: Condens. Matter

132

155

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We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the area of graphene channel showed that the dominant contributions to the low-frequency electronic noise come from the graphene layer itself rather than from the contacts. Aging of graphene transistors due to exposure to ambient for over a month resulted in substantially increased noise attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors either increased with deviation from the charge neutrality point or depended weakly on the gate bias. This observation confirms that the low-frequency noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors. Electronic address: balandin@ee.ucr.edu ; group web-site: http://www.ndl

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Section: Noise Measurements Results and Discussionmentioning

confidence: 68%

“…The noise amplitude in graphene transistors had unusual dependence on the gate bias [19][20][21][22][23]. In this paper we report a systematic study of the noise properties of single (SLG) and bilayer (BLG) graphene field-effect transistors (FETs) before and after their aging under ambient conditions over a month period.…”

mentioning

confidence: 99%

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

Rumyantsev

Liu

Stillman

et al. 2010

J. Phys.: Condens. Matter

132

155

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“…[5] The uniqueness of graphene among other solid-state materials is that all carbon atoms are located on the surface, making the graphene surface potentially highly sensitive to any changes of its surrounding environment. Along with the excellent electrical properties of graphene, [13,14] i.e., extraordinary high mobility [15,16,17] and low intrinsic electrical noise, [18][19][20][21] graphene-based electronic biosensors demonstrated greater sensitivity than traditional bioassays. [22] Additionally, graphene (at least ideal graphene) has a crystal lattice free of dangling bonds and is therefore intrinsically chemically inert.…”

Section: Introduction: Challenges and Opportunitiesmentioning

confidence: 99%

Sensing at the Surface of Graphene Field‐Effect Transistors

et al. 2016

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Abstract. 10Recent research trends now offer new opportunities for developing the next generations of label-free biochemical sensors using graphene and other two-dimensional materials. While the physics of graphene transistors operated in electrolyte is well grounded, important chemical challenges still remain to be addressed, namely the impact of the chemical functionalizations of graphene on the key electrical parameters and the sensing performances. In fact, graphene -at least ideal graphene -is highly chemically inert. The 15 functionalizations and chemical alterations of the graphene surface -both covalently and non-covalently -are crucial steps that define the sensitivity of graphene. The presence, reactivity, adsorption of gas and ions, proteins, DNA, cells and tissues on graphene have been successfully monitored with graphene. This review aims to unify most of the work done so far on biochemical sensing at the surface of a (chemically functionalized) graphene field-effect transistor and the challenges that lie ahead. We are convinced that graphene biochemical sensors 20 hold great promises to meet the ever-increasing demand for sensitivity, especially looking at the recent progresses suggesting that the obstacle of Debye screening can be overcome.2

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“…Flicker noise in graphene arises from the fluctuation in the number of charge carriers and their mobility. Techniques to reduce it such as electron irradiation [28][29][30][31][32] can be explored in this context. In addition, the high NEP in graphene is also due to the low sensitivity arising in part because of the weak dependence of the graphene resistance with temperature.…”

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confidence: 99%

Limits on the bolometric response of graphene due to flicker noise

Grover

Dubey

Mathew

et al. 2015

Applied Physics Letters

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We study the photoresponse of graphene field effect transistors using scanning photocurrent microscopy in near and far field configurations, and we find that the response of graphene under a source-drain bias voltage away from the contacts is dominated by the bolometric effect caused by laser induced heating. We find no significant change in the photocurrent with the optical modulation frequency upto 100 kHz. Although the magnitude of the bolometric current scales with bias voltage, it also results in noise. The frequency dependence of this noise indicates that it has a 1/f character, scales with the bias voltage and limits the detectable bolometric photoresponse at low optical powers.Graphene 1 -an isolated single layer of graphitepromises to be useful for photodetection and other light harvesting devices because of its gapless band structure and large broadband absorption. Photodetectors made using graphene 2 involving global illumination have been reported and the quantities of interest are the responsivity and response time. In these measurements, the role of different mechanisms involved in photogeneration is complex. In a recent study, 3 the infrared photoresponse has been observed to change with the graphene channel length suggesting different physical mechanisms playing a role at the electrodes and far away from them.Scanning photocurrent microscopy (SPCM) measurements are useful in elucidating the mechanism of photocurrent generation in graphene since the spatially resolved mapping of current can yield information about the photoresponse at different regions on the graphene device such as contacts and p-n junctions. Several mechanisms 4 have been identified such as the photovoltaic, 5-8 photothermoelectric 9,10 and bolometric effects. 11In this paper, we discuss SPCM measurements on graphene field effect transistor (FET) devices using both near and far field configurations and focus on homogeneous graphene away from the electrodes. The photocurrent generation in graphene is dominated by the bolometric effect far away from the electrodes and by the photovoltaic effect due to the built-in electric field at the contacts. The bolometric effect refers to the resistance change induced in the device by laser-induced heating and it has previously been seen in carbon nanotubes, 12 graphene 11 and in 100 nm thick black phosphorus. 13 Our main finding is that the bolometric effect, which is only visible at non-zero bias voltages is accompanied by flicker noise which scales with bias and limits the detectable bolometric signal.Graphene devices were fabricated by exfoliation of graphite on degenerately doped silicon substrates with 300 nm of silicon dioxide. Monolayer graphene flakes were identified by visual contrast in optical microscope and with Raman spectroscopy. Electron beam lithograa) Electronic mail: deshmukh@tifr.res. in FIG. 1. Schematic of the (a) near-field and (b) far-field measurement setup. In (a), a tapered fiber is used for illumination (635 nm laser diode) as part of a home-built NSOM, and in (b...

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Ultralow noise field-effect transistor from multilayer graphene

Cited by 113 publications

References 26 publications

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

Sensing at the Surface of Graphene Field‐Effect Transistors

Limits on the bolometric response of graphene due to flicker noise

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