In this article, we report the experimental and theoretical modeling on the band pass filters that are made of two thin film layers of Cu 2 Se coated onto aluminum substrates and nanosandwiched with 50 nm ytterbium layers. The nanosandwiching of Yb between two layers of Cu 2 Se is found to decrease the lattice constant, the defect density, and the strain and increase the grain size in the Cu 2 Se. Electrically, it is observed that, Al/Cu 2 Se/Al structure exhibits wave trap characteristics with notch frequency of 1.31 GHz. The Yb-layers improved the performance of the band pass filters by increasing the amplitude of the reflection coefficients, increasing the return loss values and decreasing the voltage standing wave ratios. The calculated conduction and wave trapping parameters nominate the Yb-nanosandwiched Cu 2 Se films for use in communication technology as they exhibit negative capacitance effect and narrow band pass range.
K E Y W O R D Sband pass filters, conductivity, Cu 2 Se, negative capacitance, X-ray