Ultralow Capacitance Transient Voltage Suppressor Design

Lo, Kuo-Hsuan; Huang, Chien‐Hao; Weng, Wu-Te; Huang, Tsung–Yi; Su, Hung-Der; Gong, Jeng; Huang, Chih-Fang

doi:10.1109/ted.2016.2582320

Cited by 6 publications

(1 citation statement)

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“…Introduction: Electrostatic discharge (ESD) is a common problem considering the reliability and robustness of the integrated circuits (ICs). Among the ESD devices, the forward-biased diode has been a widely used auxiliary module in on-chip or on-board ESD protection circuits, such as low-voltage diode string [1] and low capacitance transient voltage suppressor [2] etc. In these situations, the ESD failure current (I t2 ), clamping voltage (V CL ) and junction capacitance (C j ) of forwardbiased diodes affect the whole ESD protection circuit significantly.…”

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confidence: 99%

Mix‐mode forward‐biased diode with low clamping voltage for robust ESD applications

et al. 2020

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The forward-biased diode has been widely applied in electrostatic discharge (ESD) protection projects. In this Letter, various diodes with finger-shaped topology are studied by transmission line pulse (TLP) and emission microscope (EMMI) experiments. Among them, a novel mix-mode diode with P-well and floating deep N-well, called MMDIO, is fabricated by the same process and footprint, except that some discrete N + regions are being added to the original anode P + region. This approach forms a combination of a parasitic NPN transistor and a PNPN structure, which can significantly optimise the ESD current efficiency and clamping voltage (V CL). According to the comprehensive comparison, the MMDIO with overlapped anode N + layout could endure the failure current 1.25 times higher than that of a regular diode under the same junction capacitance (C j), while the V CL is reduced by 20%. Accordingly, the MMDIO is an attractive solution to pass the higher ESD level without any negative influence.

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confidence: 99%