Ultrahigh photovoltage responsivity of PEDOT:PSS–silicon hybrid heterojunction photodiodes

Abstract

Strong inversion at the poly(3,4-ethylenedioxythiophene): polystyrene sulfonate PEDOT:PSS/silicon interface facilitates the separation of excess carriers and obstructs surface recombination, both are of utmost importance for optoelectronic detectors. In this view, low-temperature solution-processed PEDOT:PSS/silicon hybrid heterojunctions possess great potential for light detection applications. We investigate the performance of hybrid PEDOT:PSS/silicon photodetectors following long-period exposure to ambience. In addition, the effect of PEDOT:PSS conductivity on the performance of hybrid heterojunction photodiodes is also explored. In the self-powered photovoltage mode, the hybrid photodiode displays an ultrahigh responsivity of 106 V/W, a noise equivalent power of 10 pW/Hz, and a detectivity up to 1010 Jones. Thermal noise is identified as the main limiting factor in the device performance. The hybrid photodetector demonstrates a desirable stability over long-time storage in air.

3D Printing of Thylakoid-PEDOT:PSS Composite Electrode for Bio-Photoelectrochemical Cells

“…PEDOT:PSS has been investigated in photovoltaics as the material for hole transportation layer , or a photodiode . Because of its photoreactivity, PEDOT:PSS is known to generate photocurrents in response to photon absorption .…”

Hybrid Silicon‐Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High‐Performance and Bias‐Switchable Multi‐Functionality

“…[15,16] Conductive polymers, such as poly(3,4-ethylene dioxythiophene) (PEDOT) and its derivatives, are promising alternatives for the transport layers due to their low refractive index (1.2-1.6) close to air. [17][18][19][20][21] Furthermore, their relatively affordable and straightforward process is another key benefit for making the materials attractive compared to other inorganic counterparts. However, the relatively low charge mobility, inefficient charge extraction capability from the Si, and poor step-coverage of conventional solution-processed polymers remain unresolved.…”

An InGaN/SiNx/Si Uniband Diode Photodetector

“…Considering applications, the relevant figures of merit are responsivity, detectivity, and bandwidth. [5][6][7] The functional section of a photodiode is the depletion region of the p-n junction or Schottky junction. [8][9][10] The built-in electric field separates the photogenerated minority electrons and holes to generate a photocurrent in short-circuit configuration, a photovoltage in open-circuit configuration and electrical power when a load resistance is connected.…”