An InGaN/SiN_x/Si Uniband Diode Photodetector

Abstract

A novel self‐powered InGaN/SiNx/Si uniband diode photodetector (PD) is introduced. The full band structure is first constructed from the transition of direct tunneling to Fowler‐Nordheim tunneling of holes through the ultrathin SiNx interlayer at forward bias in the dark. Basis is the alignment of the n‐InGaN conduction band with the p‐Si valence band at zero bias. Under illumination, the photocurrent, responsivity, and bandwidth for the self‐powered PD at zero bias indicate two distinct operation modes (i) for longer and (ii) for shorter wavelengths of incident light. The two modes involve (i) absorption in Si and electron tunneling through the SiNx interlayer and (ii) absorption in InGaN and hole transport across the SiNx interlayer. The noise is considerably larger in operation mode (i) than in operation mode (ii). This is attributed to the presence or absence of energy barriers for electron and hole transport in PD operation. Hence, noise is introduced as an independent parameter to discriminate between longer and shorter wavelength regions in dual‐wavelength photodetection.

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

“…Furthermore, some emerging visible light absorption materials, such as perovskite and transition metal halides, still face problems such as poor device performance stability and repeatability and slow response speed, which seriously restrict the application of visible light PDs. , Alternatively, InGaN is an ideal candidate material due to its tunable bandgap (0.7 eV-3.4 eV) that could achieve wavelength-selective absorption by regulating the In component. Many InGaN-based visible-light PDs have been subsequently invented and constructed toward the development trend of high responsivity and high speed in the past decade, such as InGaN/graphene heterojunction PDs, Si/SiN x /InGaN heterojunction PDs, and Si/AlN/InGaN heterojunction PDs. − Among these, 1D nanowires (NWs) exhibit the advantages of the direct conduction path of nanowire materials can effectively improve the carrier separation ability, and the large specific surface volume ratio improves light absorption. , Wang et al proposed an n-InGaN/p-Cu 2 O core–shell nanowire-based photoelectrochemical photodetector, and the responsivity and response times were up to 0.8 mA/W and 40.8/32.5 ms, respectively, under one-sun illumination . However, the higher responsivity and faster response speed of InGaN NR based PDs were limited due to the larger surface states, which would capture photogeneration carriers.…”

“…(e) Detectivity of three types of InGaN based PD. (f) Comparison of R and D* of the InGaN NR/PEDOT:PSS@Ag NW heterojunction PD with previously reported InGaN visible light PD 13,[49][50][51][52][53][54]8,[55][56][57][58][59][60][61]44.…”