Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon

Büyükköse, Serkan; Vratzov, B.; Veen, Jatila van der; Santos, P. V.; Wiel, Wilfred G. van der

doi:10.1063/1.4774388

Cited by 30 publications

(19 citation statements)

References 11 publications

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“…III C, ∆s t 11,1 2 is proportional to the electro-acoustic generation efficiency, thus being a figure of merit for the quality of the resonators. The electro-acoustic performance considerably improves when the deposition temperature is increased from room temperature to 100 • C. This result is in agreement with previous studies of piezoelectric ZnO films for the excitation of SAWs on Si [19] and GaAs [31], which show that the film properties increase with sputtering temperature (in those cases, the sputtering process was carried out at temperatures between 300 and 350 • C). A further increase of the sputtering temperature of the ZnO films on Au to 200 • C results in rougher surfaces (cf.…”

Section: A Structural Properties Of the Zno Filmssupporting

confidence: 91%

Generation and Propagation of Superhigh-Frequency Bulk Acoustic Waves in GaAs

et al. 2019

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Coherent super-high-frequency (SHF) vibrations provide an excellent tool for the modulation and control of excitations in semiconductors. Here, we investigate the piezoelectric generation and propagation of longitudinal bulk acoustic waves (LBAWs) with frequencies up to 20 GHz in GaAs crystals using bulk acoustic wave resonators (BAWRs) based on piezoelectric thin ZnO films. We show that the electro-acoustic conversion efficiency of the BAWRs depends sensitively on the sputtering conditions of the ZnO films. The BAWRs were then used for the study of the propagation properties of the LBAWs in GaAs in the frequency and temperature ranges from 1 to 20 GHz and 10 and 300 K, respectively, which have so far not been experimentally accessed. We found that the acoustic absorption of GaAs in the temperature range from 80 K to 300 K is dominated by scattering with thermal phonons. At lower temperatures, in contrast, the acoustic absorption saturates at a frequency-dependent value. Experiments carried out with different propagation lengths indicate that the saturation is associated with losses during reflections at the sample boundaries. We also demonstrate devices with high quality factor fabricated on top of acoustic Bragg-reflectors. The results presented here prove the feasibility of high-quality acoustic resonators embedding GaAsbased nanostructures, thus opening the way for the modulation and control of their properties by electrically excited SHF LBAWs. I. arXiv:1907.09787v2 [cond-mat.mtrl-sci] 4 Sep 2019 FIG. 2. (a) Calculated dependence of the |s11| 2 scattering parameter (corresponding to the rf-reflection coefficient) for a BAWR on a GaAs (001) wafer consisting of a dZnO = 440 nm-thick ZnO layer sandwiched between bottom and top metal contacts formed by a 40 nm Au film and a 10 nm/30 nm/10 nm Ti/Al/Ti layer stack, respectively. The active area of the resonator is equal to 1960 µm 2 . (b) Dependence of the resonance frequency on dZnO: the joined full square symbols are finite element method calculations, and the open circle symbols are experimental values. The dashed line reproduces the approximation for the resonance frequency given by Eq. (1). The blue open square at fR ∼ = 5 GHz corresponds to the device simulated in (a) and (c). (c) Cross-section map of the amplitude of the displacement field of the BAWR in (a) at the resonance frequency. The calculation domain was surrounded by perfectly matched layers (PMLs) to reduce acoustic reflections from the sample boundaries.

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Section: A Structural Properties Of the Zno Filmssupporting

confidence: 91%

Generation and Propagation of Superhigh-Frequency Bulk Acoustic Waves in GaAs

et al. 2019

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“…Acousto-electronic transport in silicon was recently demonstrated at megahertz frequencies via a ZnO piezoelectric thin-film [22]. However, high frequencies (> 5 GHz) are needed for effective acousto-electronic transport and to enter the quantum regime [33].…”

Section: Introductionmentioning

confidence: 99%

“…Thin films deposited on piezoelectric substrates can have beneficial effects, such as temperature compensation of SAW frequencies by using silicon dioxide layers [47][48][49][50]. On non-piezoelectric substrates such as silicon, the deposition of piezoelectric thin-films can also lead to higher SAW frequencies via the higher acoustic velocities of the substrate [33]. However, because additional layers can have a different speed of sound, can be amorphous, and add mass on top the substrate, their electrical and mechanical impact on surface acoustic wave (SAW) generation and propagation can not be neglected [51][52][53][54].…”

Section: Introductionmentioning

confidence: 99%

“…Since drift velocity is dependent on the carrier mobility µ and the electric field E, v d = µE, in the case of low carrier mobility, a higher electric field can compensate to satisfy the velocity requirement. Higher-ordermode SAWs, in addition to having higher resonant frequencies, generate a higher electric field within the substrate than fundamental modes due to the waveguiding effect and thus, are capable of capturing and dragging charge carriers with a lower mobility [33]. Our goal in this chapter is to investigate the design of electrically and acoustically impedance matched IDTs, which excite traveling high-frequency and higher-order mode SAWs efficiently.…”

Section: Introductionmentioning

confidence: 99%

“…Thin-film piezoelectric materials enable access to high frequencies (>5 GHz) for acoustic applications [33]. Aluminum nitride is especially attractive for its high acoustic velocity (∼ 5,800 m s −1 , see Table 6.1), compatibility with CMOS integration [46] and mechanical material robustness [70].…”

Section: Introductionmentioning

confidence: 99%

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A brief introduction 1 1.1 Introduction to surface acoustic waves 1 1.1.1 Acousto-electronic transport 2 1.2 Experimental methods 4 1.2.1 Fabrication 4 1.2.2 Measurements 6 1.3 Outline of Thesis 8 2 Opto-acousto-electronic devices 11 2.1 Introduction 11 2.2 Device structure and fabrication 12 2.3 Vector network analysis 13 2.4 Opto-acousto-electronic characterization 15 2.4.1 Experimental setup and characterization at 300 K 16 2.4.2 Characterization at 10 K 17 2.4.3 RF and laser triggering 18 2.5 Discussion and conclusion 20 3 Defect origin of acoustic propagation losses in ZnO thin-films on silicon 23 3.1 Introduction and device structure 23 3.1.

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Delay lines provide the ability of controlling the time delay of a signal. Delay lines are basic and important elements that can find applications in radar, communications, and signal processing. In general, there are two types of delay lines: electrical delay lines and optical delay lines. Because an optical delay line has a much wider bandwidth and higher speed, it is a good candidate for ultra wideband systems and has attracted significant interest recently. In this article, we will first discuss electrical delay lines and then discuss optical delay lines in a greater detail.

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Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon

Cited by 30 publications

References 11 publications

Generation and Propagation of Superhigh-Frequency Bulk Acoustic Waves in GaAs

Generation and Propagation of Superhigh-Frequency Bulk Acoustic Waves in GaAs

High-frequency silico acousto-electronics

Delay Lines

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