Ultrahigh Energy Density of Antiferroelectric PbZrO₃‐Based Films at Low Electric Field

Abstract

Dielectric capacitors play a vital role in advanced electronics and power systems as a medium of energy storage and conversion. Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric (AFE) film PbZrO3 (PZO), a small amount of isovalent (Sr2+) / aliovalent (La3+) dopants are introduced to form a hierarchical domain structure to increase the polarization and enhance the backward switching field EA simultaneously, while maintaining a stable forward switching field EF. An ultrahigh energy density of 50 J cm−3 is achieved for the nominal Pb0.925La0.05ZrO3 (PLZ5) films at low electric fields of 1 MV cm−1, exceeding the current dielectric energy storage films at similar electric field. This study opens a new avenue to enhance energy density of AFE materials at low field/voltage based on a gradient‐relaxor AFE strategy, which has significant implications for the development of new dielectric materials that can operate at low field/voltage while still delivering high energy density.

Ultrahigh Energy Storage Density and Efficiency in Orthorhombic PLZST Antiferroelectric Ceramics via Composition Regulation

“…The addition of Ca 2+ and the adjustment of the Sn 4+ content inhibit grain growth, thereby refining the grain and enhancing the breakdown field strength. At the same time, carefully tuning the content of Sn 4+ disrupts the structure of the pristine electric domains, enhancing the diffuse phase transition of the ceramic and ultimately drastically reducing the hysteretic response to the applied electric field. , The results show that an ultrahigh energy density of 10.2 J cm –3 and an excellent energy efficiency of 91.4% at 560 kV cm –1 are obtained in the (Pb 0.95 Ca 0.02 La 0.02 )­(Zr 0.45 Sn 0.5 Ti 0.01 )­O 3 ceramic material. In addition, a discharge energy density of 7.4 J cm –3 was obtained at 420 kV cm –1 .…”