Ultrahigh carrier mobility contributes to remarkably enhanced thermoelectric performance in n-type PbSe

Abstract

A high average ZT value (ZTave) of ~ 1.13 in n-type PbSe-based thermoelectric material at 300-873 K have been achieved in this work. Its high thermoelectric performance originates from ultrahigh...

Percolation Process-Mediated Rich Defects in Hole-Doped PbSe with Enhanced Thermoelectric Performance

“…For example, Xiao et al investigated the thermoelectric transport behavior of n-type Pb 1−x Sn x Se compounds (x = 0 − 0.25 with an increment of 0.05). 32,33 It is found that both lattice constant and optical band gap decrease linearly with increasing x, while Seebeck coefficient shows an opposite variation tendency. 33 No structure or property anomalies were disclosed in their study.…”

“…Alloying has been proven to be an effective way of engineering the physical or chemical properties of functional materials. − A good example is PbSe–SnSe alloy, which has been widely investigated as important topological crystalline insulators, − mid-infrared detectors, , optoelectronic components, , and thermoelectric materials. , Previous studies, however, mostly focus on compositions with high alloying fractions of SnSe (SnSe has a high solubility limit of nearly 40 mol % in PbSe at room temperature), so that the properties can be intuitively better tuned. For example, Xiao et al investigated the thermoelectric transport behavior of n-type Pb 1– x Sn x Se compounds ( x = 0 – 0.25 with an increment of 0.05). , It is found that both lattice constant and optical band gap decrease linearly with increasing x , while Seebeck coefficient shows an opposite variation tendency . No structure or property anomalies were disclosed in their study.…”

Dense dislocations enable high-performance PbSe thermoelectric at low-medium temperatures

“…Among lead chalcogenides, PbSe thermoelectric material is a promising alternative of PbTe due to its low-cost Se element and balanced carrier and phonon transport properties. To enhance the thermoelectric performance in PbSe, some effective approaches have recently been reported, including band flattening to improve carrier effective mass 17 – 19 , band sharpening to tune carrier mobility 20 , 21 , dynamic doping to optimize carrier density 20 , 22 , defects design to scatter phonon transport 23 – 25 , etc. Notably, it is found that the vacancy- or interstitial-induced dislocations in PbSe-based thermoelectric material can largely reduce the lattice thermal conductivity while causing little effect on electrical transport properties, thus finally enhancing the peak ZT value.…”

Contrasting roles of Bi-doping and Bi2Te3 alloying on the thermoelectric performance of SnTe

“…However, the intrinsic coupling nature among these thermoelectric parameters implies that it is hard to obtain an enhanced ZT value via independent modulation of a single parameter. 4 To date, among the numerous thermoelectric materials at intermediate temperatures, including skutterudites, 5,6 GeTe, 7,8 SnSe, 9,10 PbTe 11,12 and its analogues PbSe 13,14 and PbS, 15,16 etc., PbTe has been regarded as a promising candidate for its good thermal stability, superior mechanical property, and outstanding performance. However, abuse of lead might induce growing worldwide concerns about environmental issues.…”

“…To date, among the numerous thermoelectric materials at intermediate temperatures, including skutterudites, 5,6 GeTe, 7,8 SnSe, 9,10 PbTe 11,12 and its analogues PbSe 13,14 and PbS, 15,16 etc. , PbTe has been regarded as a promising candidate for its good thermal stability, superior mechanical property, and outstanding performance.…”