Ultrahigh carrier mobilities and high thermoelectric performance at room temperature optimized by strain-engineering to two-dimensional aw-antimonene

Wu, Youfu; Xu, Ke; Ma, Congcong; Chen, Ying; Lu, Zixuan; Zhang, Hao; Fang, Zhaoxi; Zhang, Rongjun

doi:10.1016/j.nanoen.2019.103870

Cited by 42 publications

(40 citation statements)

References 69 publications

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“…The electronic transport coefficients S, σ/τ, and K e /τ were calculated as a function of carrier concentration and temperature for each biaxial strain. To obtain ZT, 45 the relaxation time (τ) was calculated by using deformation potential theory. 46 The theory relies on the coupling between electrons and acoustic phonons (one of the dominant scattering mechanism 47 ) and is widely used in semiconductors, 48,49…”

Section: Methodsmentioning

confidence: 99%

Tuning thermoelectric efficiency of monolayer indium nitride by mechanical strain

Çiçek

Demirtaş

Durgun

2021

Journal of Applied Physics

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Tuning the thermoelectric efficiency of a material is a complicated task as it requires the control of interrelated parameters. In this respect, various methods have been suggested to enhance the figure of merit (ZT), including the utilization of low-dimensional systems. Motivated by the effect of strain on intrinsic properties of two-dimensional materials, we examine the thermoelectric response of monolayer indium nitride (h-InN) under low biaxial strain (+1%) by using ab initio methods together with solving Boltzmann transport equations for electrons and phonons. Our results indicate that among the critical parameters, while the Seebeck coefficient is not affected prominently, electrical conductivity can increase up to three times, and lattice thermal conductivity can decrease to half at À1% strain where valence band convergence is achieved. This results in significant enhancement of ZT, especially for p-type h-InN, and it reaches 0.50 with achievable carrier concentrations ( 10 13 cm À2 ) at room temperature. Thermoelectric efficiency further increases with elevated temperatures and rises up to 1.32 at 700 K, where the system remains to be dynamically stable, suggesting h-InN as a promising material for high-temperature thermoelectric applications.

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Section: Methodsmentioning

confidence: 99%

Tuning thermoelectric efficiency of monolayer indium nitride by mechanical strain

Çiçek

Demirtaş

Durgun

2021

Journal of Applied Physics

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“…4a. The changes to the band structure for α-antimonene under such small strain are minimal 46 . Due to the large band gap of SnSe and proper band alignment, the energy gap of α-antimonene is preserved on the SnSe substrate, as shown in Fig.…”

Section: Figure 1a Schematically Illustrates the Epitaxial Growth Of ...mentioning

confidence: 99%

“…During the epitaxial growth of antimony on SnSe, the surface morphology was in situ monitored via RHEED patterns. Figure 1c 46 . The estimated lattice strain is as small as ~ -1.6% (compressed) along the zigzag, and ~ +0.4% (stretched) along the armchair direction.…”

Section: Figure 1a Schematically Illustrates the Epitaxial Growth Of ...mentioning

confidence: 99%

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Tuning the Electronic Structure of an α-Antimonene Monolayer through Interface Engineering

Shi

Xue

et al. 2020

Nano Lett.

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The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and thus their further technological applications. For instance, the freestanding Sb monolayer in puckered honeycomb phase (α-antimonene), the structural analog of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the T d -WTe 2 substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and thus the electron band of epitaxial monolayer. As a result, the nearly freestanding (semiconducting) α-antimonene monolayer with a band gap of ~170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor-semimetal crossover is observed in the bilayer α-antimonene. This study paves the way towards modifying the electron structure in twodimensional vdW materials through interface engineering.

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“…Especially, strain induces the transition from indirect to direct band gap in 2D materials, which greatly enhances luminous efficiency, making it more suitable for optoelectronic devices. As for electrical properties, proper strain amplitude can improve the performance of FETs by increasing the carrier mobility of 2D materials 23 . The piezoresistive and piezoelectric effect appear in strained 2D materials, allowing their potential applications in the sensors, photodetectors, and nanogenerators 24 .…”

Section: Introductionmentioning

confidence: 99%

Strain engineering of two‐dimensional materials: Methods, properties, and applications

Yang

Chen

Jiang

2021

InfoMat

259

163

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Two‐dimensional (2D) materials have attracted extensive research interests due to their excellent properties related to unique structure. Strain engineering, as an important strategy for tuning the lattice and electronic structure of 2D materials, has been widely used in the modulation of physical properties, which broadens their applications in flexible nanoelectronic and optoelectronic devices. In this review, we first summarize the methods of inducing strain to 2D materials and discuss the advantages and problems of various methods. We then introduce the strain‐induced effects on optical, electrical, and magnetic properties, together with the phase transition of 2D materials. Finally, we illustrate the potential applications of strained 2D materials and further look forward to their opportunities and challenges in practical applications in the future.

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Ultrahigh carrier mobilities and high thermoelectric performance at room temperature optimized by strain-engineering to two-dimensional aw-antimonene

Cited by 42 publications

References 69 publications

Tuning thermoelectric efficiency of monolayer indium nitride by mechanical strain

Tuning thermoelectric efficiency of monolayer indium nitride by mechanical strain

Tuning the Electronic Structure of an α-Antimonene Monolayer through Interface Engineering

Strain engineering of two‐dimensional materials: Methods, properties, and applications

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