2003
DOI: 10.1016/s1468-6996(03)00016-0
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Ultrafast thermal plasma physical vapor deposition of thick SiC films

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Cited by 14 publications
(6 citation statements)
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“…In those investigations, organosilanes or hydrocarbon/silane precursor systems were predominantly used for both the gas phase reactions [25][26][27][28][29][30][31][32][33][36][37][38] and solid state precursor conversions [34,35,43,45]. In the present study, two liquid-phase oxygen-bearing organosilicon precursors were tried to prepare SiC nanopowders of increased specific surface area that could be considered as affordable catalyst supports.…”
Section: Introductionmentioning
confidence: 99%
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“…In those investigations, organosilanes or hydrocarbon/silane precursor systems were predominantly used for both the gas phase reactions [25][26][27][28][29][30][31][32][33][36][37][38] and solid state precursor conversions [34,35,43,45]. In the present study, two liquid-phase oxygen-bearing organosilicon precursors were tried to prepare SiC nanopowders of increased specific surface area that could be considered as affordable catalyst supports.…”
Section: Introductionmentioning
confidence: 99%
“…The resulting powders showed a bimodal distribution of particle sizes in the characteristic ranges depending on the carbon to silicon ratio. There have also been studies on using the thermal plasma for silicon carbide coatings, namely, plasma enhanced chemical vapor deposition PE CVD [25][26][27][28][29][30][31][32][33] or thermal plasma physical vapor deposition TP PDV [34,35]. These techniques were also used for making SiC nanoparticles [36][37][38][39][40][41][42][43][44].…”
Section: Introductionmentioning
confidence: 99%
“…The nature of a created coat also corresponds with PVD processes. Wang et al successfully deposited thick silicon carbide films on stationary graphite substrates at a deposition rate of 125 nm s À1 (67). The vapor might be released as a flow of neutral atoms in vacuum (evaporation in vacuum) or be partially ionized.…”
Section: Introductionmentioning
confidence: 99%
“…The vapor carried by plasma is then deposited onto a substrate. The advantages of this process are its simplicity, flexibility, and high deposition rate (10–100 μm/min 8–11 ) with the minimum number of byproducts 12,13 . A high‐power hybrid thermal plasma which is characterized by the superposition of a RF inductive‐coupled plasma and a direct current (DC) plasma jet, was employed in this study 14 .…”
Section: Introductionmentioning
confidence: 99%