Ultrafast middle-IR lasers and amplifiers based on polycrystalline Cr:ZnS and Cr:ZnSe

Vasilyev, Sergey; Moskalev, Igor; Mirov, Mike; Smolski, Viktor; Mirov, Sergey; Gapontsev, Valentin

doi:10.1364/ome.7.002636

Cited by 92 publications

(41 citation statements)

References 25 publications

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“…Though successful, an OPO requires the alignment of two cavities at interferometric precision, which increases the complexity of the system. RQPM has also recently been demonstrated inside the cavity of a femtosecond polycrystalline Cr:ZnS oscillator and in a single-pass amplifier operating at 2400 nm, generating sum-frequency signals and broadband second and fourth harmonics down to 510 nm [23,24]. In this Letter, we describe the use of a Ho:YAG thin-disk oscillator lasing at 2 μm, in combination with a fiber pulse-compressor, as a high-power femtosecond driver for intra-pulse DFG towards the longer wavelengths based on RQPM.…”

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confidence: 99%

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

et al. 2019

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We present a mid-infrared (MIR) source based on intrapulse difference-frequency generation under the random quasi-phase-matching condition. The scheme enables the use of non-birefringent materials whose crystal orientations are not perfectly and periodically poled, widening the choice of media for nonlinear frequency conversion. With a 2 μm driving source based on a Ho:YAG thin-disk laser, together with a polycrystalline ZnSe element, an octavespanning MIR continuum (2.7-20 μm) was generated. At over 20 mW, the average power is comparable to regular phase-matching in birefringent crystals. A 1 μm laser system based on a Yb:YAG thin-disk laser was also tested as a driving source in this scheme. The new approach provides a simplified way for generating coherent MIR radiation with an ultrabroad bandwidth at reasonable efficiency.

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confidence: 99%

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

et al. 2019

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“…Solid-state lasers based on Cr 2+ -doped II-VI material, often called the Ti:Sapphire of the mid-infrared, are reliable sources for directly generating ultrashort femtosecond pulses in the 2-3 μm spectral range [21][22][23][24][25]. With recent improvements in output power to Wattlevel and pulse durations down to few optical cycles [26,27], the output has also been effectively down-converted to generate broadband mid-infrared radiation between 3-20 μm [28][29][30]. To date, virtually all mode-locked (ML) Cr:ZnS/ZnSe lasers are pumped by mature rare-earth-doped fiber lasers.…”

Section: Introductionmentioning

confidence: 99%

Directly diode-pumped, Kerr-lens mode-locked, few-cycle Cr:ZnSe oscillator

et al. 2019

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Received XX Month XXXX; revised XX Month, XXXX; accepted XX Month XXXX; posted XX Month XXXX (Doc. ID XXXXX); published XX Month XXXX Lasers based on Cr 2+ -doped II-VI material, often known as the Ti:Sapphire of the mid-infrared, can directly provide few-cycle pulses with super-octave-spanning spectra, and serve as efficient drivers for generating broadband midinfrared radiation. It is expected that the wider adoption of this technology benefits from more compact and costeffective embodiments. Here, we report the first directly diode-pumped, Kerr-lens mode-locked Cr 2+ -doped II-VI oscillator pumped by a single InP diode, providing average powers of over 500 mW and pulse durations of 45 fsshorter than six optical cycles at 2.4 µm. These correspond to a sixty-fold increase in peak power compared to the previous diode-pumped record, and are at similar levels with respect to more mature fiber-pumped oscillators. The diode-pumped femtosecond oscillator presented here constitutes a key step towards a more accessible alternative to synchrotron-like infrared radiation, and is expected to accelerate research in laser spectroscopy and ultrafast infrared optics.

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“…Design and fabrication of new luminescent materials operating in the Mid‐IR region lies in the core of this topic . In order to obtain materials with broadband emission, many approaches such as codoped with rare‐earth ions, embedding Mid‐IR activators into chalcogenide glasses, etc., have been explored . Cr 2+ ‐doped II‐VI semiconductors such as ZnS and ZnSe exhibit a unique blend of physical, spectroscopic, and optical parameters, which has been recognized as an excellent Mid‐IR luminescent materials .…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11][12][13] In order to obtain materials with broadband emission, many approaches such as codoped with rare-earth ions, embedding Mid-IR activators into chalcogenide glasses, etc., have been explored. [14][15][16][17][18] Cr 2+ -doped II-VI semiconductors such as ZnS and ZnSe exhibit a unique blend of physical, spectroscopic, and optical parameters, which has been recognized as an excellent Mid-IR luminescent materials. 19 In this paper, we report the success in incorporation of ZnS:Cr 2+ into borophosphate glass and fabricate the corresponding composite (CZPB).…”

Section: Introductionmentioning

confidence: 99%

Mid‐infrared luminesce of ZnS:Cr²⁺‐glass composite and fiber

et al. 2019

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Cr2+‐doped materials with mid‐infrared (Mid‐IR) broadband luminescence are of fundamental importance for various applications, such as solid‐state lasers technology, biolabeling, optical telecommunication, and solar energy management. Especially, Cr2+‐doped glass has been considered as one of important material candidates. The major challenge is the precipitation of crystals doped with Cr2+ ions in glass. So, “crystals in glass composite” is an effective method to solve this issue. Here, we describe a ZnS:Cr2+ in borophosphate glass composite (CZPB) which exhibits Mid‐IR luminescence in the region from 1700 to 2900 nm with the full width at half maximum (FWHM) of about 690 nm. In addition, the materials can also be fabricated into fiber without obvious change in the characteristic luminescence band. The results provide new opportunities for the construction of the broadband fiber light source operating at Mid‐IR waveband region.

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Ultrafast middle-IR lasers and amplifiers based on polycrystalline Cr:ZnS and Cr:ZnSe

Cited by 92 publications

References 25 publications

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

Directly diode-pumped, Kerr-lens mode-locked, few-cycle Cr:ZnSe oscillator

Mid‐infrared luminesce of ZnS:Cr²⁺‐glass composite and fiber

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Ultrafast middle-IR lasers and amplifiers based on polycrystalline Cr:ZnS and Cr:ZnSe

Cited by 92 publications

References 25 publications

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

Directly diode-pumped, Kerr-lens mode-locked, few-cycle Cr:ZnSe oscillator

Mid‐infrared luminesce of ZnS:Cr2+‐glass composite and fiber

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Mid‐infrared luminesce of ZnS:Cr²⁺‐glass composite and fiber