Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs

Lester, L. F.; Hwang, K. C.; Ho, P.; Ballingall, J. M.; Sutliff, J. A.; Gupta, Sandeep; Whitaker, J.F.; Williamson, S.

doi:10.1109/68.215265

Cited by 36 publications

(9 citation statements)

References 13 publications

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“…1 The high resistivity together with very short carrier lifetime make the LT materials ideal for high speed photoconductive switches. 2,10,11 However, sub-ps carrier lifetimes also observed in as-grown LT materials 12 suggest that a large concentration of point defects other than As precipitates/GaAs interface can shorten the carrier lifetime significantly.…”

Section: ͓S0003-6951͑96͒01529-x͔mentioning

confidence: 95%

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Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

Chin

Chen²,

Ganikhanov

et al. 1996

Applied Physics Letters

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Section: ͓S0003-6951͑96͒01529-x͔mentioning

confidence: 95%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13] The as-grown LT-GaAs is nonstoichiometric with excess As resulting in a large concentration of antisite defects 5,6 and creating a deep level donor character. Postgrowth annealing at 500-900°C induces the formation of As precipitates 7 and the material becomes very resistive.…”

Section: ͓S0003-6951͑96͒01529-x͔mentioning

confidence: 99%

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

Chin

Chen²,

Ganikhanov

et al. 1996

Applied Physics Letters

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“…However, to take advantage of the superior laser and fiber technology available at 1.3 and 1.55 m, small band gap terahertz materials will be needed. Especially InGaAs has been under investigation for that purpose either as LTG-InGaAs, 3,4 or with ErAs embedded nanoparticles. 5,6 Unlike LTG-GaAs, the sheet resistance of LTG-InGaAs is very low, around 2 ϫ 10 2 ⍀ / sq.…”

Section: Introductionmentioning

confidence: 99%

Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications

Sigmund

Pavlidis

Hartnagel

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Growth and characterization of GaAsSb metamorphic samples on an InP substrate We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220-315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out of the layer during annealing. However, dark-field and Z-contrast transmission electron microscopy analyses revealed the formation of GaAsBi clusters with a Bi content higher than in the surrounding matrix, as well as the presence of metallic As clusters. The apparent reduction of the lattice constant can be explained by a twofold process: the diffusion of the excess As incorporated within As Ga antisites to As clusters, and the reduction of the Bi content in the GaAs matrix due to diffusion of Bi to GaAsBi clusters. Diffusion of both As and Bi are believed to be assisted by the native point defects, which are present in the low-temperature as-grown material. V C 2013 AIP Publishing LLC. [http://dx.

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“…[7][8][9][10][11][12] It is known that LT-grown undoped GaAs is nonstoichiometric with about 1% excess arsenic, and this excess arsenic provides an ultrafast nonradiative recombination time of about 200 fs. However, in undoped InGaAs/InAlAs multiple quantum wells ͑MQWs͒, 12 the carrier lifetime is as large as 160 ps even in the 200°C grown sample.…”

mentioning

confidence: 99%

Ultrafast 1.55 μm all-optical switching using low-temperature-grown multiple quantum wells

Takahashi

Kawamura

Iwamura

1996

Applied Physics Letters

147

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Field-effect active plasmonics for ultracompact electro-optic switching Appl. Phys. Lett. 101, 121113 (2012) Quantum optical switches and beam splitters with surface plasmons J. Appl. Phys. 112, 054304 (2012) Liquid-based infrared optical switch Appl. Phys. Lett. 101, 041104 (2012) Proposal of an optical nonvolatile switch utilizing surface plasmon antenna resonance controlled by giant magnetoresistance Appl.

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Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs

Cited by 36 publications

References 13 publications

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications

Ultrafast 1.55 μm all-optical switching using low-temperature-grown multiple quantum wells

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