2010
DOI: 10.1021/jp107531h
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Ultrafast Hole Transfer in CdSe/ZnTe Type II Core−Shell Nanostructure

Abstract: We have synthesized thiol-capped CdSe/ZnTe quantum dot core−shell nanostructures by colloidal methods, have characterized them by steady-state absorption and photoluminescence (PL) spectroscopy and further confirmed by high resolution transmission electron microscopy and X-ray diffraction measurements. Clear red shift on shell formation was observed in optical absorption and photoluminescence studies. Time-resolved emission studies indicate longer emission lifetime of CdSe/ZnTe core−shell as compared to CdSe Q… Show more

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Cited by 55 publications
(68 citation statements)
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References 46 publications
(45 reference statements)
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“…[ 87 ] Zamkov and co-workers reported the mecha-nism of holes extraction from the ZnSe core to the surface of the CdS shell in a ZnSe/CdS core shell system. The indirect-type exciton was also observed in CdTe/CdSe [ 90,91 ] and CdSe/ZnTe [ 90,92 ] core/shell QDs. Moreover, the transfer of photoinduced electrons and holes from the core to the surface of the shell was approximately an order of magnitude faster than electron-hole recombination time, indicating that most of the absorbed energy in ZnSe/CdS could be used to drive photocatalytic reactions.…”
Section: Type-ii Heterostructuresmentioning
confidence: 90%
“…[ 87 ] Zamkov and co-workers reported the mecha-nism of holes extraction from the ZnSe core to the surface of the CdS shell in a ZnSe/CdS core shell system. The indirect-type exciton was also observed in CdTe/CdSe [ 90,91 ] and CdSe/ZnTe [ 90,92 ] core/shell QDs. Moreover, the transfer of photoinduced electrons and holes from the core to the surface of the shell was approximately an order of magnitude faster than electron-hole recombination time, indicating that most of the absorbed energy in ZnSe/CdS could be used to drive photocatalytic reactions.…”
Section: Type-ii Heterostructuresmentioning
confidence: 90%
“…5,11 A relatively small lattice mismatch for epitaxial growth and a large conduction-/valence-band offset for band-alignment tuning are two important factors for the manipulation of nanoheterostructures, such as CdS/ZnSe, CdSe/ZnTe, CdSe/CdS, InP/CdS, and CdTe/CdS core/shell QDs. [11][12][13][14][15] The lattice parameters of bulk CdTe and CdS are 6.481 and 5.838 Å, respectively. 16 CdTe conduction-and valence-band energies (about 3.5 and 5.2 eV, respectively, below vacuum) are higher than those of CdS (about 3.7 and 6.3 eV, respectively, below vacuum) by 0.2 and 1.1 eV, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…29 Because of its very negative conduction band position, ZnTe has a large driving force for the interfacial electron transfer from the semiconductor to the acceptor. 30 As a result, ZnTe is considered an attractive material for designing novel photocatalysts. SrTiO 3 -ZnTe nanocomposites have been synthesized via the hydrothermal method.…”
Section: Introductionmentioning
confidence: 99%