Ultrafast graphene photodetector

Xia, Fengnian; Mueller, Thomas; Lin, Yu-Ming; Valdes‐Garcia, Alberto; Avouris, Phaedon

doi:10.1038/nnano.2009.292

Cited by 2,882 publications

(2,028 citation statements)

References 29 publications

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“…Responsivity and response time of part current state‐of‐the‐art low dimensional photodetectors 17, 31, 32, 39, 40, 44, 47, 67, 99, 100, 101, 102, 103, 104. The blue line represents a typical magnitude order of GBP for traditional high‐performance thin‐film photodetectors.…”

Section: Summary and Perspectivesmentioning

confidence: 99%

Photogating in Low Dimensional Photodetectors

2017

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Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors.

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Section: Summary and Perspectivesmentioning

confidence: 99%

Photogating in Low Dimensional Photodetectors

2017

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“…The electronic band diagram of graphene shows a linear energy dispersion at the K point, thus resulting in a gapless band structure 1, 20, 133, 134, 135, 136, 137, 138, 139. Consequently, the gapless band structure of graphene results in the low controllability of electronics and inferior photoresponsivity,2, 5, 27, 134 which impedes the applications in electronics and optoelectronics. The electronic structures of typical GIVMCs are summarized in Table 1.…”

Section: Crystal Structuresmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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“…Since the graphene photodetector was first implemented in 2009,1 various van der Waals (vdW) materials, such as graphene,1, 2, 3, 4 transition metal dichalcogenides (TMDs),5, 6, 7, 8, 9, 10, 11, 12 and black phosphorus (BP),13, 14, 15 have been utilized to achieve high‐performance photodetectors with high photoresponsivity and a wide detection range. In the early graphene‐based photodetectors, photodetection in a wide range from ultraviolet to terahertz wavelengths was possible, owing to the zero‐bandgap nature of graphene 16.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Lee

Shim

et al. 2018

Advanced Science

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In recent years, various van der Waals (vdW) materials have been used in implementing high‐performance photodetectors with high photoresponsivity over a wide detection range. However, in most studies reported so far, photodetection in the infrared (IR) region has not been achieved successfully. Although several vdW materials with narrow bandgaps have been proposed for IR detection, the devices based on these materials exhibit notably low photoresponsivity under IR light illumination. Here, highly efficient near‐infrared (NIR) photodetection based on the interlayer optical transition phenomenon in a vdW heterojunction structure consisting of ReS2 and ReSe2 is demonstrated. In addition, by applying the gate‐control function to the two‐terminal vdW heterojunction photodetector, the photoresponsivity is enhanced to 3.64 × 105 A W−1 at λ = 980 nm and 1.58 × 105 A W−1 at λ = 1310 nm. Compared to the values reported for previous vdW photodetectors, these results are the highest levels of photoresponsivity in the NIR range. The study offers a novel device platform for achieving high‐performance IR photodetectors.

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Ultrafast graphene photodetector

Abstract: operation, and good internal quantum efficiency. ╪These authors contributed equally to this work *

Cited by 2,882 publications

References 29 publications

Photogating in Low Dimensional Photodetectors

Photogating in Low Dimensional Photodetectors

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

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