Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor

Abstract

Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big data. In addition, the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous components into a homogeneous device without considering impedance matching. This report proposes a 20 ns programme flash memory with 108 self-rectifying ratios based on a 0.65-nm-thick MoS2-channel transistor. A high-quality van der Waals heterojunction with a sharp interface is formed between the Cr/Au metal floating layer and h-BN tunnelling layer. In addition, the large rectification ratio and low ideality factor (n = 1.13) facilitate the application of the MoS2-channel flash memory as a bit-line select transistor. Finally, owing to the ultralow MoS2/h-BN heterojunction capacitance (50 fF), the memory device exhibits superior performance as a high-frequency (up to 1 MHz) sine signal rectifier. These results pave the way toward the potential utilisation of multifunctional memory devices in ultrafast two-dimensional NAND-flash applications.

Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications

“…Figure 1 shows a comparison between an artificial neural network and a biological network. At present, research on three-and multipleterminal synaptic transistors is still preliminary, and neuromorphic transistors have mainly focused on four types: synapses based on floating gate-regulated, ferroelectric, photoelectric and electromechanical field effect transistors (FETs) 34,[84][85][86][87][88][89][90][91][92][93][94][95][96][97] .…”

Multilayer SnS2/few-layer MoS2 heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application

“…Of note, the surface of 2DLMs is free of dangling bonds, thereby circumventing the lattice matching constrains and processing limitations of conventional covalently bonded semiconductors (e.g., Si & GaAs) in terms of constructing heterostructures. These fascinating physical characteristics have endowed 2DLMs with high adaptability to various applications [6][7][8][9][10][11][12][13][14].…”

Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing

“…2D materials exhibit low degrees of the lattice mismatch effect in heteroepitaxy, owing to their van der Waals nature, which in turn provides 2D materials with great application potential in the domains of energy storage/conversion and optoelectronics . According to their numerous degrees of freedom, 2D ternary materials have attracted increasing interest in recent years. , In 2D ternary materials, the increased freedom of stoichiometry change can be exploited to tailor their physical characteristics, which may lead to potential applications. , …”

“…10,11 In 2D ternary materials, the increased freedom of stoichiometry change can be exploited to tailor their physical characteristics, which may lead to potential applications. 12,13 Due to the low toxicity and high conductivity of liquid indium (In) and related alloys, devices manufactured on a platform of liquid In and related materials are of interest in the rapidly expanding field of printed electronics based on liquid metals. 14 Liquid-metal printing (LMP) is a novel method for fabricating 2D metal oxide films.…”