Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells

Delpon, E. Lugagne; Oudar, J; Bouché, Nicolas; Raj, R.; Shen, Alexandre; Stelmakh, N.; Lourtioz, J.‐M.

doi:10.1063/1.120885

Cited by 96 publications

(14 citation statements)

References 9 publications

(8 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several approaches have been explored for reducing the carrier lifetime, such as carrier diffusion, 8 low temperature growth, 9 stimulated recombination of carriers, 10 ion implantation, 11,12 carrier sweeping 13 or surface recombination. 14 In particular, in planar PhCs, the carrier lifetime is strongly affected by surface recombination at the walls of the etched holes.…”

mentioning

confidence: 99%

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Bazin¹,

Lenglé²,

Gay³

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

show abstract

mentioning

confidence: 99%

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Bazin¹,

Lenglé²,

Gay³

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…[17][18][19][20] The increased numbers of the lattice-mismatch induced dislocations or misfits in the quantum well regions of samples B and C have effectively enhanced the nonradiative recombinations, and shortened the absorption recovery times. This method to achieve ultrashort recovery time requires no postgrowth treatment, and there-fore is much simpler compared to the traditional methods, such as ion implantation 14 and proton bombardment. 15 In addition, it is noted that the as-grown HT GaN buffer was only ϳ500 nm thick in samples B and C, while in our optimized GaN-based SESAM structure reported in Ref.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, many methods have been developed to purposely reduce the recovery times of the saturable absorbers. The most common methods are low-temperature ͑LT͒ growth, 13 ion implantation, 14 and proton bombardment. 15 More recently, recovery time reduction by controlling the InP buffer thickness has been demonstrated in the metamorphically grown GaAs-based SESAMs.…”

Section: Introductionmentioning

confidence: 99%

Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers

Lin

Xiang

Chua

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

ps recovery time in an InGaAsP/InGaAsP multiple-quantum-well saturable absorber employing carrier sweepoutIn this work, a simple method to reduce the absorption recovery time of the InGaN/GaN quantum well saturable absorber was demonstrated. The recovery time of the saturable absorber grown by metal organic chemical vapor deposition was effectively controlled by controlling the crystal quality. Transmission electron microscopy results showed that, for saturable absorbers with reduced GaN buffer thicknesses, increased dislocations were introduced into the quantum well regions. The degraded crystal quality would therefore cause an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption. In addition, with the as-grown thin GaN buffers, the severe interference-induced reflectivity fluctuations were successfully suppressed.

show abstract

“…The samples were irradiated with 10-MeV nickel ions, with a dose of 2÷5 10 11 cm -2 . [6][7][8] The recovery time was found to reduce for implanted samples approximately by two orders of magnitude, from 150-250 ps down to 2-8 ps. The absorber mirrors studied and optimized here for operation with fiber lasers have low value of the saturation fluence in a range of ~1-10 µJ/cm 2 .…”

Section: Self-starting Mode-locked Fiber Lasers Based On Sesam Technomentioning

confidence: 96%

Ultrafast fiber lasers for homeland security

Okhotnikov

2005

Optical Security Systems

View full text Add to dashboard Cite

Detecting weapons concealed underneath clothing, analyzing the contents of suspicious-looking envelopes, or even spotting the onset of cancer: these are just some of the exciting prospects that have been turning terahertz wave research into one of the most important topics in photonics. Most broadband pulsed THz sources are based on the excitation of different materials with ultrashort laser pulses. So far, generation of tunable narrow-band THz radiation has been demonstrated using ultrafast solid state lasers as a source of high-intensity optical pulses. The lack of a high-power, low-cost, portable room-temperature THz source is the most significant limitation of modern THz systems. Advances in fiber laser technology can be used to further the capabilities of the homeland security. Using semiconductor saturable absorber mirrors allows for reliable mode-locked operation with different values of cavity dispersion in a broad spectrum ranged from 900 to 1600 nm. Semiconductor saturable absorbers mirrors have been used successfully to initiate and to sustain mode-locking in a wide range of core-pumped fiber lasers. The main advantage of the semiconductor saturable absorber mirrors (SESAM) is the possibility to control important parameters such as absorption recovery time, saturation fluence and modulation depth through the device design, growth conditions and post-growth processing. The SESAM as a cavity mirror in the fiber laser results in compact size, environmentally stable and simple ultrashort pulse lasers that can cover wide wavelength range and generate optical pulses with durations from picoseconds to femtoseconds. Employing SESAM technology for mode-locking, the double-clad fiber laser promises superior pulse quality, high stability and pulse energy without need for power booster that eventually degrades the pulse quality due to nonlinear distortions in the amplifier fiber. We give an overview of recent achievements in ultrafast fiber lasers; discuss basic properties, technical challenges and methods to achieve stable short pulse operation with high average and peak powers from all-fiber devices. The important aspects of the mode-locked fiber lasers relevant to practical security systems are presented. Particularly, the effect of the amplified spontaneous emission (ASE) on the performance of the SESAMs in mode-locked fiber lasers has been investigated. We show that high level of ASE intensity typical for fiber lasers can saturate the absorption and degrade significantly the nonlinear response of the SESAM. We studied the effect of the absorber recovery time and demonstrated that the ion-irradiated SESAMs with fast nonlinear response are less affected by the ASE radiation and, consequently, in the presence of the high-power ASE they exhibit better self-starting capability compared with slow absorbers. The promising method for noise suppression based on the cavity-enhanced optical limiting is another important issue described. Optical limiting and saturable absorption are studied by placing two-photon absorpti...

show abstract

Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells

Abstract: Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy Appl. Phys. Lett. 74, 1570 (1999); 10.1063/1.123619Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple quantum well

Cited by 96 publications

References 9 publications

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers

Ultrafast fiber lasers for homeland security

Contact Info

Product

Resources

About