Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.
International audienceWe report a chalcogenide suspended-core fiber with a record Kerr-nonlinearity of 46 000 W-1km-1 and attenuation of 0.9 dB/m. Four-wave-mixing efficiencies of -5.6 dB at 10 GHz and -17.5 dB at 42.7 GHz are obtained
Photonic crystal cavity-based switching is studied both theoretically and experimentally in order to identify the best configuration to maximize "wavelength conversion" efficiency. In particular, it is shown that an enhanced contrast can be reached when the probe is blueshifted with respect to the resonance. The use of an InP/SOI hybrid photonic crystal nanocavity is reported for the first time for all-optical error-free "wavelength conversion" at 20 Gbit/s with a nonreturn to zero on-off keying signal.
We report on the first demonstration of the wavelength demultiplexing of a 100-Gb/s nonreturn to zero signal to four channels at 25 Gb/s, based on resonant structures implemented in GaInP photonic crystals. The device is composed of four filters based on H0 cavities with one common input bus and four drop outputs showing a very small footprint. The measured device characteristics show good performances in terms of transmission and crosstalk with insertion losses of 11 dB on the best port. System measurements have validated its operation with <; 1-dB power penalty at a bit error rate of 10-9
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