Ultrafast charge transfer in a type-II MoS<sub>2</sub>-ReSe<sub>2</sub> van der Waals heterostructure

Zhang, Lu; He, Dawei; He, Jiaqi; Fu, Yang; Bian, Ang; Han, Xiuxiu; Liu, Shuangyan; Wang, Yongsheng; Zhao, Hui

doi:10.1364/oe.27.017851

Cited by 15 publications

(28 citation statements)

References 39 publications

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“…[ 29 ] For example, the recently reported MoS 2 /ReS 2 heterostructure exhibits a charge transfer of 1–10 ps. [ 37 ] Electrostatic gating has great ability to tune the charge transfer dynamics by tailoring the conduction band offset (Δ E C ) and valence band offset (Δ E V ) at the heterointerface. When the balance between exciton radiative recombination and charge transfer is broken, the funneling efficiency will change, leading to the tunable PL enhancement factor presented in Figure 4d.…”

Section: Resultsmentioning

confidence: 99%

Tailoring the Energy Funneling across the Interface in InSe/MoS₂ Heterostructures by Electrostatic Gating and Strain Engineering

Sun

Chen

et al. 2021

Advanced Optical Materials

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bandgap, atomic layer feature, and anisotropic/isotropic character, rendering them promising candidate for electronic and optoelectronic applications beyond the scaling limit. [1,2] Transition metal dichalcogenides (TMDs), as the most investigated 2D semiconductors, exhibit a direct-indirect bandgap transition, rich excitonic states, and valley-spin degree of freedom, however, their device performance is significantly impeded by low carrier mobility and weak light absorption. [1,[3][4][5][6] Indium selenide (InSe), as a representative member of III-VI family, has been demonstrated advantages over TMDs for high-performance opto-/electronic applications, including field effect transistors, phototransistors, tunneling, and high-speed devices. [7][8][9][10][11] InSe retains high carrier mobility up to 10 4 cm 2 V −1 s −1 even down to a few-layer limit. [9] Moreover, it exhibits a direct bandgap character from bulk to few-layer, which locates in the infrared regime, bridging the optical gap between TMDs and other narrow-bandgap 2D semiconductors, e.g., black phosphorous and AsP. [11,12] Different from the case of TMDs, the absorption of which is attributed to their in-plane dipole contribution, the light absorption of InSe is mainly determined by its out-of-plane Introduction2D semiconductors have attracted much attention due to their unique structures and electronic properties, such as well-defined

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Section: Resultsmentioning

confidence: 99%

Tailoring the Energy Funneling across the Interface in InSe/MoS₂ Heterostructures by Electrostatic Gating and Strain Engineering

Sun

Chen

et al. 2021

Advanced Optical Materials

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“…[23,24] Thus, one can speak of new physical phenomena in these materials and they are being considered for a wide range of applications, ranging from ultrafast charge separation, (opto)electronics through quantum information processing or valleytronics. [17,19,[25][26][27][28][29][30] A large variety of 2L vdW HS has recently been investigated on the basis of experiments and theory, [11,13,15,16,18,19,6,22,[30][31][32][33][34][35] including these constituting of layers from Group 6 TMDCs. [5][6][7]11,16,[36][37][38] For instance, Kim et al, [19] reported ultra-long valley lifetime in MoS 2 /WSe 2 heterostructures, which was explained by the spatial confinement of electrons and holes in different layers.…”

Section: Introductionmentioning

confidence: 99%

Tuning Valleys and Wave Functions of van der Waals Heterostructures by Varying the Number of Layers: A First‐Principles Study

Ramzan

Kunstmann

Kuc

2021

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In van der Waals heterostructures of two-dimensional transition-metal dichalcogenides (2D TMDCs) electron and hole states are spatially localized in different layers forming long-lived interlayer excitons. Here, we have investigated, from first principles, the influence of additional electron or hole layers on the electronic properties of a MoS2/WSe2 heterobilayer (HBL), which is a direct band gap material. Additional layers modify the interlayer hybridization, mostly affecting the quasiparticle energy and real-space extend of hole states at the G and electron states at the Q valleys. For a sufficient number of additional layers, the band edges move from K to Q or G, respectively. Adding electron layers to the HBL leads to more delocalized Q states, while G states do not extend much beyond the HBL, even when more hole layers are added.These results suggest a simple and yet powerful way to tune band edges and the real-space extend of the electron and hole wave function in TMDC heterostructures, strongly affecting the lifetime and dynamics of interlayer excitons.

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“…2D atomically thin layered materials, such as transition metal dichalcogenides (TMDs), have attracted growing research attention owing to their rich physics and various device applications . However, the nature of individual 2D materials, such as the zero bandgap of graphene, low carrier mobility of grown TMD, and the rapid degradation of black phosphorus under the atmospheric condition, has hindered the practical application of 2D materials .…”

Section: Introductionmentioning

confidence: 99%

“…However, the nature of individual 2D materials, such as the zero bandgap of graphene, low carrier mobility of grown TMD, and the rapid degradation of black phosphorus under the atmospheric condition, has hindered the practical application of 2D materials . To solve this problem, similar to the evolution of homo‐ to heterojunctions of compound semiconductors, attention has turned to the stacking of different 2D materials for possible device applications . Fabrication of TMD heterostructures enables the control of the transport and recombination mechanism of the carriers, which lead to enhanced electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, epitaxially grown 2D material heterostructures may become a promising approach for 2D material stacking. However, only small flakes are obtained by chemical vapor deposition (CVD), which has been the most popular method to grow TMD layers . In addition, lateral growth is easier than vertical stacking of 2D materials by using CVD .…”

Section: Introductionmentioning

confidence: 99%

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Internal Fields in Multilayer WS₂/MoS₂ Heterostructures Epitaxially Grown on Sapphire Substrates

Kim

Tsai

et al. 2020

Physica Status Solidi (a)

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In conventional 3D heterostructures, a gradual potential gradient in constituent layers and an abrupt potential discontinuity at heterointerfaces can appear. Studies of the electrostatic potential in 2D heterostructures require careful characterizations and analyses because the 2D materials have distinct physical characteristics compared with their 3D counterparts. Herein, three kinds of samples are prepared using sulfurization of metal layers on single‐crystalline sapphire substrates: WS2, MoS2, and WS2/MoS2. The surface potential (VS) of the samples is measured using Kelvin probe force microscopy. The light‐induced VS change in the stand‐alone trilayer (3L‐) WS2 (−63 mV) is much more notable than that in the 3L‐WS2/3L‐MoS2 heterostructure (−12 mV). In contrast, the light‐induced VS change in the stand‐alone 3L‐MoS2 is positive and very large (≈200 mV). To explain these results, the potential and internal field distributions are proposed for both the stand‐alone (WS2 and MoS2) and heterostructure (WS2/MoS2) samples. The polarity and magnitude of the internal field depend on the electronic interaction and screening from neighboring 2D layers and underlying substrates. Relative peak shifts of the Raman spectra of the samples are obtained and discussed, with consideration of the internal field effects.

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Ultrafast charge transfer in a type-II MoS₂-ReSe₂ van der Waals heterostructure

Cited by 15 publications

References 39 publications

Tailoring the Energy Funneling across the Interface in InSe/MoS₂ Heterostructures by Electrostatic Gating and Strain Engineering

Tailoring the Energy Funneling across the Interface in InSe/MoS₂ Heterostructures by Electrostatic Gating and Strain Engineering

Tuning Valleys and Wave Functions of van der Waals Heterostructures by Varying the Number of Layers: A First‐Principles Study

Internal Fields in Multilayer WS₂/MoS₂ Heterostructures Epitaxially Grown on Sapphire Substrates

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Ultrafast charge transfer in a type-II MoS2-ReSe2 van der Waals heterostructure

Cited by 15 publications

References 39 publications

Tailoring the Energy Funneling across the Interface in InSe/MoS2 Heterostructures by Electrostatic Gating and Strain Engineering

Tailoring the Energy Funneling across the Interface in InSe/MoS2 Heterostructures by Electrostatic Gating and Strain Engineering

Tuning Valleys and Wave Functions of van der Waals Heterostructures by Varying the Number of Layers: A First‐Principles Study

Internal Fields in Multilayer WS2/MoS2 Heterostructures Epitaxially Grown on Sapphire Substrates

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Ultrafast charge transfer in a type-II MoS₂-ReSe₂ van der Waals heterostructure

Tailoring the Energy Funneling across the Interface in InSe/MoS₂ Heterostructures by Electrostatic Gating and Strain Engineering

Tailoring the Energy Funneling across the Interface in InSe/MoS₂ Heterostructures by Electrostatic Gating and Strain Engineering

Internal Fields in Multilayer WS₂/MoS₂ Heterostructures Epitaxially Grown on Sapphire Substrates