Ultrafast carrier-relaxation dynamics in self-assembled InAs/GaAs quantum dots

Yarotski, D. A.; Averitt, R. D.; Nègre, Nicolas; Crooker, S. A.; Taylor, Antoinette J.; Donati, Giovanni; Stintz, A.; Lester, L. F.; Malloy, K.J.

doi:10.1364/josab.19.001480

Cited by 66 publications

(48 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Apparently their excitation levels are below those where state filling begins to control the capture dynamics. We note that their highest intensity capture time of 0.6 ps is similar to capture times in our study and also that of Yarotski et al 45 at similar fluences.…”

Section: à2supporting

confidence: 92%

See 1 more Smart Citation

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

Chauhan

Riffe

Everett

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Using 800 nm, 25-fs pulses from a mode locked Ti:Al 2 O 3 laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In 0.4 Ga 0.6 As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

show abstract

Section: à2supporting

confidence: 92%

“…45 Their pump fluence (0.04 mJ/cm 2 ) was in the middle of our range of fluences. From their data, they deduce an electron capture time of 0.5 ps for excitation (and probing) with 800 nm pulses.…”

Section: à2mentioning

confidence: 69%

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

Chauhan

Riffe

Everett

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The preferential single-electron capture to the QD is probably influenced by the unbalanced relaxation rate of the photogenerated electrons and holes in the GaAs barrier region falling to the ground state in the QD. [40][41][42] As discussed above, the underlying carrier dynamics around the QD was successfully analyzed, and an electron-transfer process was shown to be dominant. However, from a viewpoint of quantum emitter, this process hinders the stability of excitonic states populated in the QD.…”

Section: -3mentioning

confidence: 96%

Carrier-transfer dynamics between neutral and charged excitonic states in a single quantum dot probed with second-order photon correlation measurements

et al. 2013

View full text Add to dashboard Cite

We report a comprehensive investigation of carrier-transfer dynamics in a single InAs quantum dot (QD) based on second-order photon correlation measurements. The experimentally obtained auto and crosscorrelation functions as well as photoluminescence intensities are successfully explained on the basis of a series of rate equations with common excitation and also single-carrier-capture/escape rates to/from a QD. This approach enables us to understand the carrier-transfer dynamics responsible for the stability of a quantum two-level system formed in a single QD under various excitation conditions. We clarify that the transition between neutral and charged excitonic states is suppressed by one order of magnitude under quasiresonant excitation.

show abstract

“…Distinct contrast between two excitation energies was observed, i.e., X 0 line is accompanied by charged exciton emission under WL excitation, while the charged exciton emission was almost absent under barrier excitation. Further study on this behavior is now under way, but one possible Barrier excitation WL excitation X 0 X -interpretation for this observation is higher electron mobility in WL and a hindrance of hole capture into QD due to strain-induced potential barrier in a valence band [16]. For the barrier excitation, the potential barrier becomes less important and photogenerated electron-hole pair will be equally captured into QD, which will result in suppressed charged exciton formation.…”

Section: Resultsmentioning

confidence: 91%

Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot

Kumano

Kimura

Endo

et al. 2006

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

Triggered single-photon generation from InAlAs quantum dot (QD) was demonstrated for the first time. Emitted photon energy coincides with high detection efficiency range of Si single-photon detectors, which is highly suitable for free-space communication. Single-QD spectroscopy and crossed photon correlation measurements unambiguously revealed that several emitting lines observed in a single mesa structure originated from the identical QD, and two temporary competing decay processes associated with neutral states and charged states were identified. Presence of the competing process is also inferred from an analysis of steady-state photoluminescence intensities. Formation process of charged exciton in QD is also discussed.

show abstract

Ultrafast carrier-relaxation dynamics in self-assembled InAs/GaAs quantum dots

Cited by 66 publications

References 19 publications

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

Carrier-transfer dynamics between neutral and charged excitonic states in a single quantum dot probed with second-order photon correlation measurements

Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot

Contact Info

Product

Resources

About