2013
DOI: 10.1103/physrevb.88.045324
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Carrier-transfer dynamics between neutral and charged excitonic states in a single quantum dot probed with second-order photon correlation measurements

Abstract: We report a comprehensive investigation of carrier-transfer dynamics in a single InAs quantum dot (QD) based on second-order photon correlation measurements. The experimentally obtained auto and crosscorrelation functions as well as photoluminescence intensities are successfully explained on the basis of a series of rate equations with common excitation and also single-carrier-capture/escape rates to/from a QD. This approach enables us to understand the carrier-transfer dynamics responsible for the stability o… Show more

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Cited by 9 publications
(12 citation statements)
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“…4(b)). This is similar to previous work on resonantly excited QDs 27,28,[34][35][36] , but here the behavior is more complicated. For the QD used in this study, the data indicate that there are two nearby charge traps within 70 nm.…”
Section: Discussionsupporting
confidence: 88%
“…4(b)). This is similar to previous work on resonantly excited QDs 27,28,[34][35][36] , but here the behavior is more complicated. For the QD used in this study, the data indicate that there are two nearby charge traps within 70 nm.…”
Section: Discussionsupporting
confidence: 88%
“…5(b)]. This is similar to previous work on resonantly excited QDs [60][61][62]137,176], but here the behavior is more complicated. For the QD used in this study, the data indicate that there are two nearby charge traps within 70 nm.…”
Section: Resultssupporting
confidence: 84%
“…Distinction between the charged and neutral excitons has mainly been made based on linear-polarization-resolved measurements and the lack of fine structure splitting for the CX in contrast to the X emission line, 23,24 additionally supported by cross-correlation of the photon emission from both X and CX complexes exhibiting a characteristic line shape of the second order correlation function. 24,25 Figure 1(a) presents a low-temperature (T ¼ 5 K) lPL spectrum consisting of a neutral (at 0.7988 eV) and charged exciton (at 0.7948 eV) emission features from a single InAs/ InGaAlAs/InP QDash. The energy distance between both spectral lines is about 4 meV, which defines the charged exciton binding energy in this QDash.…”
mentioning
confidence: 99%