Ultrafast carrier dynamics in InP photonic crystals

Holzman, Jonathan F.; Strasser, Patric; Wüest, Robert; Robin, F.; Erni, Daniel; Jäckel, H.

doi:10.1088/0957-4484/16/6/055

Cited by 26 publications

(17 citation statements)

References 15 publications

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“…Implantation in InP should result in similar activation levels as for GaAs, though the Si (n dopant) would have a higher activation compared to Be (p dopant) [33]. At the same time, non-radiative recombination for InP has been shown to be over an order of magnitude slower due to the positioning of surface trap defects within the bandgap [58], [59]. Our preliminary Poisson simulations show that it should be possible to attain inversion in QWs and lasing at room temperature in properly designed InP lateral junctions.…”

Section: Discussion and Outlookmentioning

confidence: 99%

Electrically driven photonic crystal nanocavity devices

Shambat

Ellis

Petykiewicz

et al. 2012

Advanced Photonics Congress

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Abstract-Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of highperformance photonic crystal lasers has thus far remained elusive due to the complexities associated with current injection into cavities. A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this study. We have demonstrated electrically pumped lasing in our junctions with a threshold of 181 nA at 50 K-the lowest threshold ever demonstrated in an electrically pumped laser. At room temperature, we find that our devices behave as single-mode light-emitting diodes (LEDs), which when directly modulated, have an ultrafast electrical response up to 10 GHz corresponding to less than 1 fJ/bit energy operation-the lowest for any optical transmitter. In addition, we have demonstrated electrical pumping of photonic crystal nanobeam LEDs, and have built fiber taper coupled electro-optic modulators. Fibercoupled photodetectors based on two-photon absorption are also demonstrated as well as multiply integrated components that can be independently electrically controlled. The presented electrical injection platform is a major step forward in providing practical low power and integrable devices for on-chip photonics.

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Section: Discussion and Outlookmentioning

confidence: 99%

Electrically driven photonic crystal nanocavity devices

Shambat

Ellis

Petykiewicz

et al. 2012

Advanced Photonics Congress

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“…Surface states promote free-carrier recombination in proportion to the surface area. Prior research has shown all-optical switching with cylindrical [15] and spherical [16] semiconductor nanostructures with large surface state densities can speed up recombination. This study uses spherical nanoparticles, having the higher surface-area-to-volume ratio of the two.…”

Section: Nanoparticle Free-carrier Dynamicsmentioning

confidence: 99%

An investigation of semiconductor nanoparticles for application to all-optical switching

2016

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A practical all-optical switch is necessary to alleviate electronic bottlenecks in fibre optic networks. Thus, a new alloptical switch is introduced here-exhibiting femtojoule switching energies and femtosecond switching times. The alloptical switches use 40 µm dielectric spheres to direct high-intensity photonic nanojets into peripheral coatings of semiconductor nanoparticles. Semiconductor nanoparticle coatings of Si, CdTe, InP, and CuO are studied and found to yield switching energies of approximately 1 pJ, 500 fJ, 400 fJ, and 300 fJ with switching times of 2 ps, 2.3 ps, 900 fs, and 350 fs, respectively.

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“…We have performed pump-probe time-resolved reflectivity measurements at 810nm on pure InP PhC pads with various periods and air filling factors [80]. The pump and probe beam were focused at 45° and 0° angles of incidence, respectively.…”

Section: Device Characterizationmentioning

confidence: 99%

Photonic integration for high-denisty and multifunctionality in the InP-material system

et al. 2006

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Monolithic photonic integration offers unsurpassed perspectives for higher functional density, new functions, high performance, and reduced cost for the telecommunication. Advanced local material growth techniques and the emerging photonic crystal (PhC) technology are enabling concepts towards high-density photonic integration, unprecedented performance, multi-functionality, and ultimately optical systems-on-a-chip. In this paper, we present our achievements in photonic integration applied to the fabrication of InP-based mode-locked laser diodes capable of generating optical pulses with sub-ps duration using the heterogeneous growth of a new uni-traveling carrier ultrafast absorber. The results are compared to simulations performed using a distributed model including intra-cavity reflections at the sections interfaces and hybrid mode-locking. We also discuss our work on InP-based photonic crystals (PhCs) for dense photonic integration. A combination of two-dimensional modeling for functional optimization and three-dimensional simulation for real-world verification is used. The fabricated structures feature more than 3.5µm deep holes as well as excellent pattern-transfer accuracy using electron-beam lithography and advanced proximity-effects correction. Passive devices such as waveguides, 60° bends and power splitters are characterized by means of the end-fire technique. The devices are also investigated using scanning-near field optical microscopy. The PhC activity is extended to the investigation of TM bandgaps for all-optical switches relying on intersubband transitions at 1.55µm in AlAsSb/InGaAs quantum wells.

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Ultrafast carrier dynamics in InP photonic crystals

Cited by 26 publications

References 15 publications

Electrically driven photonic crystal nanocavity devices

Electrically driven photonic crystal nanocavity devices

An investigation of semiconductor nanoparticles for application to all-optical switching

Photonic integration for high-denisty and multifunctionality in the InP-material system

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