Ultrafast Accelerated Retention Test Methodology for RRAM Using Micro Thermal Stage

Wang, Ziwen; Jiang, Zizhen; Zheng, Xin; Fong, Scott W.; Chen, Hongyu; Wong, H.-S. Philip; Nishi, Yoshio

doi:10.1109/led.2017.2700398

Cited by 7 publications

(12 citation statements)

References 17 publications

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“…[128] However, www.advelectronicmat.de several reports in the field of RS do not conduct any aggressive stress that allows doing such extrapolation. Actually, the best would be to measure the retention at several (preferably elevated, >80 °C) temperatures and extrapolating such data points, given any failures were observed [131] (see Figure 6b). One correct methodology to evaluate the retention of RS devices in aggressive conditions is to increase the temperature during the CVS applied to obtain the I-t curve.…”

Section: State Retentionmentioning

confidence: 99%

“…If this method is used, the temperature applied during the I – t curve measured to characterize the endurance should be indicated (as well as the read voltage). Actually, the best would be to measure the retention at several (preferably elevated, >80 °C) temperatures and extrapolating such data points, given any failures were observed (see Figure b). Moreover, in several MIM cells the retention failure (i.e., the unwanted transition from LRS to HRS) occurs suddenly, meaning that elaborating predictions based on short‐times I – t curves may be a bit risky.…”

Section: Device Characterizationmentioning

confidence: 99%

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Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

Self Cite

477

434

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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Section: State Retentionmentioning

confidence: 99%

Section: Device Characterizationmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

Self Cite

477

434

View full text Add to dashboard Cite

show abstract

“…To be more precise and correct on the prediction, retention tests should be performed at higher temperatures (>80 °C) to observe possible failures. [ 335,336 ] Long retention tests (≥10 5 s) collected at ≥85 °C have been reported for solution‐based metal oxide RRAMs. [ 98,142,144,172,276 ] Wang and co‐workers reported ITO/MgTiNiO x /Al S‐RRAM devices with long retention data at 85 °C ( Figure ).…”

Section: Figures Of Merit and Current Challenges Of S‐rrammentioning

confidence: 99%

“…To be more precise and correct on the prediction, retention tests should be performed at higher temperatures (>80 °C) to observe possible failures. [335,336] Long Figure 18. a) Cumulative probabilities of R on and R off values after 10 5 trials of cyclic bending of the PES substrate and photograph of the flexible solutionbased ZnO RRAM.…”

Section: State Retentionmentioning

confidence: 99%

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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

Khan,

Rehman,

Iqbal

et al. 2023

ACS Appl. Electron. Mater.

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Due to the fast evolution of information technology, high-speed and scalable memory devices are being investigated for data storage and datadriven computation. Resistive switching random access memory (RRAM) is one of the very popular types of memristors, because of its quick program/erase speed and high density as a result of its simple two-terminal structure, low power consumption, and low cost of fabrication. In this review, the market for promising memristor-based memories for smart systems is examined. The switching memory devices are described and classified according to their I−V behavior to underline the physical switching mechanisms. The various filament mechanisms of the RRAM memristor, including the valence change mechanism (VCM), electrochemical metallization mechanism (ECM), and thermochemical mechanism (TCM), are especially highlighted in various structures. The performance of resistive switching devices with different reported electrode materials and resistive layers is summarized. This study provides a detailed review of materials of the different deposition techniques used for surface modification and coating. The two major areas of interest, physical and chemical vapor deposition techniques and the influence parameter on the resistive switching, are discussed in detail. The prospective applications of RRAM memristors to various fields such as security, neuromorphic computing, and non-volatile logic systems for artificial intelligence are addressed briefly as well as the future outlook.

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Ultrafast Accelerated Retention Test Methodology for RRAM Using Micro Thermal Stage

Cited by 7 publications

References 17 publications

Recommended Methods to Study Resistive Switching Devices

Recommended Methods to Study Resistive Switching Devices

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

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