Ultrabroadband transmission measurements on waveguides of silicon-rich silicon dioxide

Neal, Rachel; Charlton, Martin; Parker, G.J.; Finlayson, Chris E.; Netti, M.C.; Baumberg, Jeremy J.

doi:10.1063/1.1631065

Cited by 21 publications

(10 citation statements)

References 14 publications

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“…Few loss studies have been recently reported only on slab waveguides with Si-nc. [16][17][18] In this work first we present a thorough study on the physical and optical characteristics of rib-loaded waveguides containing Si-nc obtained by ion implantation of Si into silica to create a well-controlled Si excess profile followed by an annealing step for the precipitation and growth of the Si nanoclusters. The structural and optical characteristics of the active material have been studied, leading to a good knowledge and control of its properties.…”

Section: Introductionmentioning

confidence: 99%

Low-loss rib waveguides containing Si nanocrystals embedded in SiO2

Pellegrino¹,

Garrido²,

Garcı́a³

et al. 2005

Journal of Applied Physics

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We report on the study and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900-nm spectral range. A Si nanocrystal ͑Si-nc͒ rich SiO 2 layer with nominal Si excess ranging from 10% to 20% was produced by quadrupole ion implantation of Si into thermal SiO 2 formed on a silicon substrate. Si-ncs were precipitated by annealing at 1100°C, forming a 0.4-m-thick core layer in the waveguide. The Si content, the Si-nc density and size, the Si-nc emission, and the active layer effective refractive index were determined by dedicated experiments using x-ray photoelectron spectroscopy, Raman spectroscopy, energy-filtered transmission electron microscopy, photoluminescence and m-lines spectroscopy. Rib-loaded waveguides were fabricated by photolithographic and reactive ion etching processes, with patterned rib widths ranging from 1 to 8 m. Light propagation in the waveguide was observed and losses of 11 dB/ cm at 633 and 780 nm were measured, modeled and interpreted.

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Section: Introductionmentioning

confidence: 99%

Low-loss rib waveguides containing Si nanocrystals embedded in SiO2

Pellegrino¹,

Garrido²,

Garcı́a³

et al. 2005

Journal of Applied Physics

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“…Boron ions were doped into the device layer by ion implantation to form a p-type layer. The highest implantation energy was 700 keV, and the boron ion concentration was 1 × 10 19 /cm 3 . From simulation calculations, a p-n junction interface was formed at a depth of 1.5-2.5 µm from the surface of the SOI.…”

Section: Design and Fabrication Of A Si Lasermentioning

confidence: 99%

“…Nevertheless, many researchers have been trying to realize Si lasers. For examples, optical gain from Si nanocrystals [2] and light emission from nanocrystaline Si material [3] were reported and Si lasers have been developed using the Raman effect [4] and quantum effects [5]. However, these approaches have disadvantages; from the first to the third requires photoexcitation of electrons, whereas the fourth involves a complex fabrication process, and in addition, these approaches result in low gain.…”

mentioning

confidence: 99%

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

Tanaka

Kawazoe

Ohtsu

et al. 2015

Fluorescent Materials

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Abstract:We fabricated a silicon (Si) laser by applying a dressed-photon-phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon-insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing light waveguides. We designed light waveguides having a thickness of 15 µm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 µm. The intensity of amplified spontaneous emission (ASE) light was too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm 2 from the currentvoltage characteristic. This threshold current density was twenty-eight times smaller than that of a Si laser we fabricated previously.

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“…It has attracted much attention owing to its enormous spectral broadening (for instance, it is possible to obtain a white light spectrum covering the entire visible range from 400 to 700 nm), which have many useful applications in telecommunication [42], frequency metrology [43], optical coherence tomography [44], and device characterization [45]. It has to be mentioned, however, that the supercontinuum generation in photonics is, in general, a complex physical phenomenon involving many nonlinear optical effects such as self-phase modulation, cross phase modulation, four wave mixing, and stimulated Raman scattering [46].…”

Section: Generation Of Supercontinuummentioning

confidence: 99%

Supercontinuum and ultrashort-pulse generation from nonlinear Thomson and Compton scattering

2014

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Nonlinear Thomson and Compton processes, in which energetic electrons collide with an intense optical pulse, are investigated in the framework of classical and quantum electrodynamics. Spectral modulations of the emitted radiation, appearing as either oscillatory or pulsating structures, are observed and explained. It is shown that both processes generate a bandwidth radiation spanning the range of few MeV, which occurs in a small cone along the propagation direction of the colliding electrons. Most importantly, these broad bandwidth structures are temporarily coherent which proves that Thomson and Compton processes lead to generation of a supercontinuum. It is demonstrated that the radiation from the supercontinuum can be synthesized into zeptosecond (possibly even yoctosecond) pulses. Thus, confirming that Thomson and Compton scattering can be used as novel sources of an ultra-short radiation, opening routes to new physical domains for strong laser physics.

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Ultrabroadband transmission measurements on waveguides of silicon-rich silicon dioxide

Cited by 21 publications

References 14 publications

Low-loss rib waveguides containing Si nanocrystals embedded in SiO2

Low-loss rib waveguides containing Si nanocrystals embedded in SiO2

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

Supercontinuum and ultrashort-pulse generation from nonlinear Thomson and Compton scattering

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