2019
DOI: 10.1016/j.ceramint.2019.07.272
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Ultrabroad temperature stability of stuffed tridymite-type BaAl2O4 co-doped by [Zn0.5Ti0.5]3+ with weak ferroelectricity

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Cited by 7 publications
(1 citation statement)
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“…As such, their profound influence on optical properties in minerals, intrinsic electrical conductivity in semiconducting oxides, charge trapping in microelectronic devices, and electron–hole recombination centers in photovoltaic or photocatalytic materials is well-elaborated in the literature. In turn, metal oxide insulators, such as BaAl 2 O 4 , might offer even more desirable properties as they have a wide forbidden band and more complex defect structures when doped with metal cations, implying different charge compensation schemes. ,, A route to the development of innovative phototunable electronic devices with dielectric functionalities was efficiently screened out through dielectric response in Ba­(Al 0.97 Zn 0.03 ) 2 O 4‑δd reported by Nagai et al Many efforts have been made to enhance the performance of BaAl 2 O 4 by metal doping, and yet a small number of papers have provided a detailed spatial distribution of dopants within the host structure. ,, With its low dielectric constant and dielectric loss and excellent insulation properties, this weak ferroelectric , ceramic is a superior candidate to replace the traditional ferroelectric materials with high dielectric loss and high dielectric constant as multilayer ceramic capacitors (MLCCs). , On the other hand, the Co dopant is commonly used as an additive in the fabrication of MLCCs, whereas the performance and reliability of MLCCs are severely dependent on microstructural parameters (i.e., crystallite size and lattice strain) and doping effects. …”
Section: Introductionmentioning
confidence: 99%
“…As such, their profound influence on optical properties in minerals, intrinsic electrical conductivity in semiconducting oxides, charge trapping in microelectronic devices, and electron–hole recombination centers in photovoltaic or photocatalytic materials is well-elaborated in the literature. In turn, metal oxide insulators, such as BaAl 2 O 4 , might offer even more desirable properties as they have a wide forbidden band and more complex defect structures when doped with metal cations, implying different charge compensation schemes. ,, A route to the development of innovative phototunable electronic devices with dielectric functionalities was efficiently screened out through dielectric response in Ba­(Al 0.97 Zn 0.03 ) 2 O 4‑δd reported by Nagai et al Many efforts have been made to enhance the performance of BaAl 2 O 4 by metal doping, and yet a small number of papers have provided a detailed spatial distribution of dopants within the host structure. ,, With its low dielectric constant and dielectric loss and excellent insulation properties, this weak ferroelectric , ceramic is a superior candidate to replace the traditional ferroelectric materials with high dielectric loss and high dielectric constant as multilayer ceramic capacitors (MLCCs). , On the other hand, the Co dopant is commonly used as an additive in the fabrication of MLCCs, whereas the performance and reliability of MLCCs are severely dependent on microstructural parameters (i.e., crystallite size and lattice strain) and doping effects. …”
Section: Introductionmentioning
confidence: 99%