Ultra-wideband monolithic photoreceivers using HBT-compatible HPTs with novel base circuits, and simultaneously integrated with an HBT amplifier

Kamitsuna, H.

doi:10.1109/50.475567

Cited by 28 publications

(12 citation statements)

References 14 publications

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“…Two such possible alternatives are being examined: (1) a high-inputimpedance amplifier, 12 and, (2) a traveling-wave amplifier (TWA). 34 ' 40 Inductive peaking can also be used to extend bandwidth 35 (this reference discusses a GaAsbased OEIC, but the design approach can be applied to InP-based systems as well). Finally, as a precursor to future developments, preamplifiers (not OEICs) have been demonstrated with f 3dB > 30 GHz.…”

Section: Circuit Architecturesmentioning

confidence: 99%

A REVIEW OF RECENT PROGRESS IN InP-BASED OPTOELECTRONIC INTEGRATED CIRCUIT RECEIVER FRONT-ENDS

Walden

1998

Int. J. Hi. Spe. Ele. Syst.

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Section: Circuit Architecturesmentioning

confidence: 99%

A REVIEW OF RECENT PROGRESS IN InP-BASED OPTOELECTRONIC INTEGRATED CIRCUIT RECEIVER FRONT-ENDS

Walden

1998

Int. J. Hi. Spe. Ele. Syst.

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“…Additionally, unlike avalanche photodiodes, HPTs do not suffer from the excessive noise due to an avalanche process [2]. These advantages, along with their process and layer compatibility to heterojunction bipolar transistors, make them highly attractive in the manufacture of monolithic integrated single-chip optical receivers [3], [4].…”

Section: Introductionmentioning

confidence: 98%

Analytical Modeling of the Spectral Response of Heterojunction Phototransistors

Khan

Rezazadeh

2009

IEEE Electron Device Lett.

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Spectral response model for heterojunction phototransistors (HPTs) is developed from resolution of continuity equations that govern the excess optically generated minoritycarrier variation in the active layers of the HPT taking into account the related physical parameters. Realistic boundary conditions have been considered for efficient device operation, and a detailed optical-power absorption profile is constructed for accurate device modeling. The analysis is performed for GaAs-based HPTs, and the measured results at 635, 780, and 850 nm show a good agreement with theoretical calculations.

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“…For short wavelength applications, mostly p-i-n photodetectors have been employed but GaAs-based HPTs show superior performance to p-i-n photodiodes [4], [6], [7]. The parameters such as responsivity, optical gain and noise equivalent power (or specific detectivity) are important in the characterisation of photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Spectral Response Modelling of Heterojunction Phototransistors for Short Wavelength Transmission

Khan

Rezazadeh

Subramaniam

2008

2008 European Microwave Integrated Circuit Conference

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An accurate spectral response model for phototransistors has been proposed. The model is based on the calculation of photogenerated carriers through absorption in base, collector and sub-collector regions of phototransistor. Absorption pattern in AlGaAs/GaAs heterojunction phototransistors has been analysed and discussed using the proposed model. Collection efficiency, being strictly a geometry and wavelength dependent parameter, is not considered unity unlike all the precedents and its importance is highlighted. With the aid of the absorption model, absolute responsivity of a phototransistor is predicted for the first time. Power absorption profile and quantum efficiency have also been modelled. The analysis is performed for short wavelength transmission and the measurements corroborate the simulated results.

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Ultra-wideband monolithic photoreceivers using HBT-compatible HPTs with novel base circuits, and simultaneously integrated with an HBT amplifier

Cited by 28 publications

References 14 publications

A REVIEW OF RECENT PROGRESS IN InP-BASED OPTOELECTRONIC INTEGRATED CIRCUIT RECEIVER FRONT-ENDS

A REVIEW OF RECENT PROGRESS IN InP-BASED OPTOELECTRONIC INTEGRATED CIRCUIT RECEIVER FRONT-ENDS

Analytical Modeling of the Spectral Response of Heterojunction Phototransistors

Spectral Response Modelling of Heterojunction Phototransistors for Short Wavelength Transmission

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