A REVIEW OF RECENT PROGRESS IN InP-BASED OPTOELECTRONIC INTEGRATED CIRCUIT RECEIVER FRONT-ENDS

Walden, R.H.

doi:10.1142/s0129156498000269

Cited by 12 publications

(4 citation statements)

References 35 publications

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“…Near infrared (NIR) photodetection is of interest for telecommunication 1 2 , spectroscopy 3 , food analysis 4 , and night surveillance 5 applications. NIR photodetection is conventionally achieved by using compound material systems despite the complexity of system integration and high cost 6 7 8 . As a low-cost alternative, Germanium-based integrated photodetectors are intensively investigated 9 10 11 12 13 14 15 .…”

mentioning

confidence: 99%

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

Nazirzadeh

Atar

Turgut

et al. 2014

Sci Rep

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In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high as 3.5 mA/W with a low dark current density of about 50 pA/µm2. We make use of Au nanoislands on Silicon surface formed by rapid thermal annealing of a thin Au layer. Surface plasmons are excited on Au nanoislands and this field localization results in efficient absorption of sub-bandgap photons. Absorbed photons excite the electrons of the metal to higher energy levels (hot electron generation) and the collection of these hot electrons to the semiconductor results in photocurrent (internal photoemission). Simple and scalable fabrication makes these devices suitable for ultra-low-cost NIR detection applications.

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mentioning

confidence: 99%

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

Nazirzadeh

Atar

Turgut

et al. 2014

Sci Rep

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“…Optical sensitivity of the CDR recovered data (not just at the output of the LAMP) was 4.2 dBm at a BER of 10 We expected the sensitivity at the 1300-nm wavelength to be better because of the higher responsivity of the photo diode. The relatively low sensitivity of this receiver did not reflect the inherent capability of the technology [6] but rather the input specifications of the ASIC, which did not require amplifiers with high gain. In other words, the sensitivity was not noise limited but rather gain limited.…”

Section: B 75-gb/s Icmentioning

confidence: 98%

Highly integrated InP HBT optical receivers

Yung

Jensen

Walden

et al. 1999

IEEE J. Solid-State Circuits

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This paper presents two highly integrated receiver circuits fabricated in InP heterojunction bipolar transistor (HBT) technology operating at up to 2.5 and 7.5 Gb/s, respectively. The first IC is a generic digital receiver circuit with CMOS-compatible outputs. It integrates monolithically an automatic-gain-control amplifier, a digital clock and data recovery circuit, and a 1 : 8 demultiplexer, and consumes an extremely low 340 mW of power at 3.3 V, including output buffers. It can realize a full optical receiver when connected to a photo detector/preamplifier front end. The second circuit is a complete multirate optical receiver application-specific integrated circuit (ASIC) that integrates a photo diode, a transimpedance amplifier, a limiting amplifier, a digital clock and data recovery circuit, a 1 : 10 demultiplexer, and the asynchronous-transfer-mode-compatible word synchronization logic. It is the most functionally complex InP HBT optoelectronic integrated circuit reported to date. A custom package has also been developed for this ASIC.Index Terms-Heterojunction bipolar transistor, indium phosphide, optical receiver, optoelectronic integrated circuit.

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“…Historically, efficient detection is provided by exploiting the direct bandgap of all III–V semiconductors; however, the integration of materials outer to group IV semiconductor with Si integrated circuit (IC) is complicated [ 30 ]. As example, in an integrated system the PD has to be closely connected to the biasing system and the electronic amplifying circuits [ 31 ], in order to exhibit the best possible performance.…”

Section: Group IV Semiconductorsmentioning

confidence: 99%

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Dardano

Ferrara

2020

Micromachines

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With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5–10 years, thus drawing a line for future research.

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A REVIEW OF RECENT PROGRESS IN InP-BASED OPTOELECTRONIC INTEGRATED CIRCUIT RECEIVER FRONT-ENDS

Abstract: InP-based OEIC receivers look promising for high-speed (> 10 Gb/s) optical communications systems and for WDM networks because of the inherent advantages of integration, and the intrinsic speed of the devices available. This paper reviews recent developments.

Cited by 12 publications

References 35 publications

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

Highly integrated InP HBT optical receivers

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

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