Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18&amp;#x00B5;m CMOS process

Galal, A. I. A.; Pokharel, Ramesh K.; Kanay, Haruichi; Yoshida, Keiji

doi:10.1109/smic.2010.5422832

Cited by 20 publications

(11 citation statements)

References 8 publications

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“…Shunt resistive feedback is a technique that can provide good impedance matching, better gain flatness. This technique is insufficient to provide flat gain, minimum noise figure and broad bandwidth only on basis of feedback [13] [14]. The common-gate amplifier topology suffers from poor power gain and noise figure [15].…”

Section: Overview Of Uwb Lna Topologymentioning

confidence: 99%

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A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application

Kunal¹,

Abdul²

2015

CAE

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This paper proposes 2GHz ~ 8GHz UWB LNA with totem pole technique for low noise figure. The LNA was designed using 0.15 µm GaAs pHMET process. The designed LNA was simulated in ADS tool. The LNA exhibits a S(2,1) of 33.4~29.7 dB, minimum noise figure is 1.383~1.391 dB, reverse isolation was better than 40 dB in entire band. The LNA draws 32 mA. Resistive feedback technique was used for wideband matching and low noise figure. General TermsRFIC,

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Section: Overview Of Uwb Lna Topologymentioning

confidence: 99%

“…The first stage is optimized for noise matching and the resistive shunt-feedback stage provides wideband gain and good stability [13]. First stage transistor is driving second stage along with total current.…”

Section: Overview Of Proposed Lna Schematicmentioning

confidence: 99%

A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application

Kunal¹,

Abdul²

2015

CAE

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“…Capacitive feedback or active feedback can be utilized to compensate for the gain decrease in resistive feedback amplifiers [5,6]. Conventionally inductive peaking or capacitive peaking has been employed to obtain a bandwidth extension [7][8][9][10]. However, analytic expressions for return loss or input impedance have not been fully derived for this topology using inductive peaking.…”

Section: Introductionmentioning

confidence: 99%

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

Jeong¹,

Cho

Min³

2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, important performance metrics such as voltage gain, return loss, noise figure and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high impedance-matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that input impedance can be described in the form of second-order frequency response, where poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor located between the gate and the drain decreases the third-order harmonics at the output. Fabricated in 0.18 µm CMOS process, the chip area of this wideband LNA is 0.202 mm 2 , including pads. Measurement results illustrate that the input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 6-8 dB over 1.5 -13 GHz. In addition, good linearity (IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

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“…Low cost, reduced power consumption, and transmission of data at high rates are the advantages of UWB technology. UWB technology has many applications such as wireless sensor and personal area networks, ground penetrating radars, and medical applications [2].…”

Section: Introductionmentioning

confidence: 99%

CMOS Ultra-Wideband Low Noise Amplifier Design

Yousef

Jia

Pokharel

et al. 2013

International Journal of Microwave Science and Technology

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This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.

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Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18µm CMOS process

Cited by 20 publications

References 8 publications

A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application

A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

CMOS Ultra-Wideband Low Noise Amplifier Design

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