Ultra-thin graphene edges at the nanowire tips: a cascade cold cathode with two-stage field amplification

Maiti, Uday Narayan; Maiti, Soumen; Majumder, Tapas Pal; Chattopadhyay, Kalyan Kumar

doi:10.1088/0957-4484/22/50/505703

Cited by 45 publications

(26 citation statements)

References 39 publications

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“…The presence of graphene protrusions is a key factor responsible for the excellent field emission properties of hybrids. As a consequence of graphene interlinking 31 , nanowire tips are capped with graphene to facilitate electron emission via band bending. It is expected that the advantages of SiNWs/graphene based nanomaterials have the high aspect ratio, stable structure, and outstanding electrical properties 32 33 34 35 36 37 38 39 40 41 .…”

Section: Resultsmentioning

confidence: 99%

Optimizing Field Emission Properties of the Hybrid Structures of Graphene Stretched on Patterned and Size-controllable SiNWs

Liao

et al. 2015

Sci Rep

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Graphene is one of the ideal nanomaterials to be paired with silicon, and their complementary properties can be exploited in field emission (FE) devices. We reported an efficient way to produce and adjust the dimension of uniform protrusions within graphene. First, a multistep template replication process was utilized to fabricate highly periodic and well-aligned silicon nanowires (SiNWs) of different diameters (400, 500 and 600 nm). Then, large-scale and uniform graphene, fabricated by chemical vapor deposition (CVD), was transferred onto these size-controlled SiNWs to obtain the nanoscale and uniform undulations. As compared to the nanowires alone, the hybrid structures lead to higher FE performance due to electron conductivity enhancement, high-density emmison protrusions and band bending. These hybrid SiNWs/graphene structures could provide a promising class of field emission cathodes.

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Section: Resultsmentioning

confidence: 99%

Optimizing Field Emission Properties of the Hybrid Structures of Graphene Stretched on Patterned and Size-controllable SiNWs

Liao

et al. 2015

Sci Rep

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“…9,28,29 In this work, we demonstrate the fabrication of heterostructure eld emitters using a simple and robust technique for depositing graphene on SiT (graphene/SiT) arrays, which can be practical electron sources for advanced devices. graphene or GO coated on the top of nanowires or nanotips.…”

Section: Introductionmentioning

confidence: 99%

Enhanced electron field emission properties from hybrid nanostructures of graphene/Si tip array

Chang

Srinivasu

et al. 2015

RSC Adv.

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Highly efficient with excellent stability electron field emitters based on monolayer graphene coated on wellaligned Si tip (graphene/SiT) arrays fabricated by a simple transfer method are demonstrated. The graphene monolayer is coated on the Si tip array using a chemical vapor deposition process, while the SiTs are prepared through the etching process of a Si substrate. The novel heterostructure field emitter enhanced electron tunneling, as a result, exhibits a better emission property. In addition, the fabricated microplasma devices based on the graphene/SiT heterostructure are closely correlated to the field emission properties of the graphene/SiT materials. The monolayer graphene supported on vertical SiTs provides the protruded nanostructure, which locally enhances the electric field and thus improves the field emission and the plasma illumination characteristics. Experimental Preparation of graphene/SiT arraysA schematic description of the fabrication process of graphene/ SiT array eld emitters is illustrated in Fig. 1. A photoresist (PR, EPG512) lm of thickness 1.0 mm is spin-coated on a Si substrate. This is then patterned by a conventional photolithographic process to form a square periodic pattern of size

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“…5(b) shows FN plots of the FE data for the samples measured. 9,[36][37][38][39][40][41][42] The corresponding E th and b values measured for planar and FLG/mSi cathodes suggest that the lower the emission threshold the higher the enhancement factor obtained. 5(a)) are determined by fitting the linear part of the data, following eqn (7), assuming a typical work function for graphite of 4.6 eV.…”

Section: Resultsmentioning

confidence: 92%

Free-standing graphene on microstructured silicon vertices for enhanced field emission properties

et al. 2012

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Controlled deposition of graphene in different orientations relative to the substrate is challenging and majority of existing deposition methods lead to sheets that lay flat on the substrate surface, limiting the potential applications in which the exposed sheet surface area and the atomically thin edges of graphene are exploited. Here we describe a simple and general solution-based methodology for the fabrication of random arrays of free-standing few-layer graphene (FLG) flakes on micro-spikes engraved on Si substrates. This should greatly benefit applications using free-standing graphene, such as in energy storage/conversion devices and bright electron sources. As a proof of concept, it is shown that the FLG sheets protruding on the top of micro-spikes are good electron emitters with turn-on fields as low as 2.3 V μm(-1) and field enhancement of few thousands. The emission performance and long-term stability achieved by this hierarchical deposition process are superior to that of planar graphene sheets and demonstrate promise for applications. Mechanisms leading to formation of free-standing FLG flakes are discussed.

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Ultra-thin graphene edges at the nanowire tips: a cascade cold cathode with two-stage field amplification

Cited by 45 publications

References 39 publications

Optimizing Field Emission Properties of the Hybrid Structures of Graphene Stretched on Patterned and Size-controllable SiNWs

Optimizing Field Emission Properties of the Hybrid Structures of Graphene Stretched on Patterned and Size-controllable SiNWs

Enhanced electron field emission properties from hybrid nanostructures of graphene/Si tip array

Free-standing graphene on microstructured silicon vertices for enhanced field emission properties

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