Ultra-thin dual polarized millimeter-wave phased array system-in-package with embedded transceiver chip

Kamgaing, Telesphor; Elsherbini, A.; Oster, Sasha; Rawlings, Brandon; Lee, Kyu-Oh

doi:10.1109/mwsym.2015.7166967

Cited by 18 publications

(6 citation statements)

References 5 publications

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“…MMIC chip in the AiP system can be attached to the antenna substrate with chip pad connected by wire bonding or solder bumping, which introduce parasitic parameters. Another method is to have the chip embedded into substrate, using fan-out Redistribution Layers (RDL) for interconnection [4] [5], which has low parasitic parameters and is the most suitable for mm-wave system integration. For an AiP system, two distribution wire networks are required; one for chip pad interconnection, another for antenna feeding network.…”

Section: Introductionmentioning

confidence: 99%

A Wideband Antenna for mm-Wave Antenna-in-Package Application

2022

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Antenna-in-Package has been widely applied for millimeter-wave systems that integrate the MMIC chip and antenna into one package. For organic substrate Antenna-in-Package solutions, probe feeding and aperture-coupled feeding patches are generally used as radiation units. In this work, a patch antenna is proposed using coupled resonation; a wideband, high-gain and compact 3-D antenna package integration is realized. An equivalent circuit model is analysed for the coupled structure. 𝝀/𝟒 coupled line is adopted for impedance matching, the whole antenna is designed on the same thick radiation patch substrate, with less organic substrate lamination layers. For millimeter-wave Antenna-in-Package structures, vias are generally used for vertical interconnections, which function well in the lower millimeter-wave frequency range. For operation frequency higher than 100GHz, design difficulties may be encountered for via interconnection, with performance degeneration on impedance matching and transmission loss. This work integrates a Hshaped slot instead of vias on an organic substrate, realizing a high frequency and wideband mm-wave transition. An interconnection structure is also adopted to convert a microstrip line to differential microstrip line in the feeding network. Antenna prototype with 2×4 radiation array is designed for verification purpose at 20GHz frequency range with simulated bandwidth of 23%. The prototype is fabricated with separate PCB boards assembled with screws, measured antenna gain is 12.7dBi-13.5dBi. The proposed structure provides a wideband and low-loss solution for potential higher frequency mm-wave Antenna-in-Package applications.INDEX TERMS Antenna-in-Package (AiP), coupling feed, millimeter-wave (mm-wave), wideband

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Section: Introductionmentioning

confidence: 99%

A Wideband Antenna for mm-Wave Antenna-in-Package Application

2022

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“…To achieve both high-performance and low-profile, the 3-dimensional (3-D) system-in-package (SiP) has been an attractive and efficient approach to produce MMW wireless systems [7,8,9,10]. At present, low temperature co-fired ceramic (LTCC) [11,12,13,14,15], highdensity interconnect (HDI) [16,17,18,19,20], and embedded wafer level ball grid array (eWLB) [21,22,23,24,25] have all been demonstrated for mass production of MMW SiPs. However, the selection for MMW SiP is a tradeoff among compactness, cost, electrical performance and thermo-mechanical reliability [26].…”

Section: Introductionmentioning

confidence: 99%

Si-based system-in-package design with broadband interconnection for E-band applications

Chu

Zhou

et al. 2021

IEICE Electron. Express

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This letter presents a silicon-based package design for E-band communication systems. As the primary concern to package, the radiofrequency (RF) interconnection from carrier board to the die is carefully designed based on the impedance transformation characteristic of the transmission line (TL). In addition, the simulation results show that the designed interconnection is robust to moderate process deviations. To verify the electrical performance of the designed interconnection, a dummy testing structure is designed, fabricated and measured. The measurement results show that the return loss is less than −10.6 dB in the commercial communication frequency range of 71-86 GHz for E-band applications.

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“…The 5G PA, low-noise amplifier (LNA), T/R switches, phase shifter, and various passives are all integrated into the FEM IC as shown in Figure 1, whose architecture is rather different from their 3G/4G counterparts and also with a much higher level of IC integration. In some cases the antennas may be directly packaged on top of the FEM IC on the wafer-scale to achieve even higher integration with reasonable performance [3,4]. The high integration requirement of FEM ICs and massive antenna systems may favor silicon-based technologies for 5G mobile products, even though GaAs or GaN FEMs usually have better performances than their silicon counterparts [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…In some cases the antennas may be directly packaged on top of the FEM IC on the wafer-scale to achieve even higher integration with reasonable performance [3,4]. The high integration requirement of FEM ICs and massive antenna systems may favor silicon-based technologies for 5G mobile products, even though GaAs or GaN FEMs usually have better performances than their silicon counterparts [3][4][5][6][7]. In addition to the high integration requirement, as the TX operation frequency moves to cm-Wave/mm-Wave frequencies, it has been wellrecognized as a very difficult task to design a high-efficiency linear PA to overcome the overheating issue for successful massive MIMO realization.…”

Section: Introductionmentioning

confidence: 99%

A Review of 5G Power Amplifier Design at cm‐Wave and mm‐Wave Frequencies

Lie

Mayeda

et al. 2018

Wireless Communications and Mobile Computing

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The 5G wireless revolution presents some dramatic challenges to the design of handsets and communication infrastructures, as 5G targets higher than 10 Gbps download speed using millimeter-wave (mm-Wave) spectrum with multiple-input multiple-output (MIMO) antennas, connecting densely deployed wireless devices for Internet-of-Everything (IoE), and very small latency time for ultrareliable machine type communication, etc. The broadband modulation bandwidth for 5G RF transmitters (i.e., maximum possibly even above 1 GHz) demands high-power efficiency and stringent linearity from its power amplifier (PA). Additionally, the phased-array MIMO antennas with numerous RF front-ends (RFFEs) will require unprecedented high integration level with low cost, making the design of 5G PA one of the most challenging tasks. As the centimeter-wave (cm-Wave) 5G systems will probably be deployed on the market earlier than their mm-Wave counterparts, we will review in this paper the latest development on 15 GHz and 28 GHz 5G cm-Wave PAs extensively, while also covering some key mm-Wave PAs in the literature. Our review will focus on the available options of device technologies, novel circuit and system architectures, and efficiency enhancement techniques at power back-off for 5G PA design.

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Ultra-thin dual polarized millimeter-wave phased array system-in-package with embedded transceiver chip

Cited by 18 publications

References 5 publications

A Wideband Antenna for mm-Wave Antenna-in-Package Application

A Wideband Antenna for mm-Wave Antenna-in-Package Application

Si-based system-in-package design with broadband interconnection for E-band applications

A Review of 5G Power Amplifier Design at cm‐Wave and mm‐Wave Frequencies

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