Ultra thin Al<sub>2</sub>O<sub>3</sub> passivation for hetero-junction Si solar cell

Kim, Sangpyeong; Balaji, Pradeep; Augusto, André; Bowden, Stuart; Honsberg, Christiana B.

doi:10.1109/pvsc40753.2019.8980907

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…It achieved a 26.7% efficiency in 2017, the highest efficiency in the crystalline silicon solar cell industry [1]. Technologies can be applied to increase the open-circuit voltage (V oc ), short-circuit current density (J sc ), and fill factors (FF) of solar cells to improve their efficiency [20][21][22][23]. SHJ solar cells, which feature insulator and TCO structures instead of TCO, were recently proposed in order to increase J sc [24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells

et al. 2023

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Antireflection coatings (ARCs) with an indium thin oxide (ITO) layer on silicon heterojunction solar cells (SHJ) have garnered significant attention, which is due to their potential for increasing current density (Jsc) and enhancing reliability. We propose an additional tungsten trioxide (WO3) layer on the ITO/Si structure in this paper in order to raise the Jsc and demonstrate the influence on the SHJ solar cell. First, we simulate the Jsc characteristics for the proposed WO3/ITO/Si structure in order to analyze Jsc depending on the thickness of WO3 using an OPAL 2 simulator. As a result, the OPAL 2 simulation shows an increase in Jsc of 0.65 mA/cm2 after the 19 nm WO3 deposition on ITO with a doping concentration of 6.1 × 1020/cm2. We then fabricate the proposed samples and observe an improved efficiency of 0.5% with an increased Jsc of 0.75 mA/cm2 when using a 20 nm thick WO3 layer on the SHJ solar cell. The results indicate that the WO3 layer can be a candidate to improve the efficiency of SHJ solar cells with a low fabrication cost.

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Section: Introductionmentioning

confidence: 99%

Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells

et al. 2023

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“…16,17 Therefore, it is a challenge to effectively balance the passivating effect and carrier conduction through the insulating Al 2 O 3 layer for SHJ solar cells while using an Al 2 O 3 passivation layer. 18 Consequently, for a Al 2 O 3 /MoO x hole-selective contact for bifacial SHJ solar cells, a precise optimizing process of the contact is implemented to obtain excellent passivation and high lightsoaking capacity. The total thickness of the contact is optimized toward trade-off between parasitic loss and passivating quality.…”

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confidence: 99%

Al₂O₃/MoO_x Hole-Selective Passivating Contact for Silicon Heterojunction Solar Cell

Chowdhury¹,

Khokhar²,

Pham³

et al. 2022

ECS J. Solid State Sci. Technol.

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Carrier selective contact (CSC) layers have been extensively studied to realize high passivation effect in solar cells. Excellent passivation properties of Al2O3 and a-Si:H(i) as passivating interlayers between the hole-selective contact (HSC) MoOx and p-type c-Si wafer surface are reported herein. MoOx single layer exhibits a high work function value (≥5.0 eV), which can cause sufficient band bending in the band structure for HSC. An Al2O3/MoOx contact exhibits a significantly higher transmittance and surface passivation compared with that of an a-Si:H(i)/MoOx contact. The passivation results for Al2O3/MoOx contact are a carrier lifetime (τeff) of 830 μs and implied open circuit voltage (iVOC) of 726 mV, whereas for conventional a-Si:H(i)/MoOx contact, the corresponding values are 770 μs and 716 mV. Delicate thickness optimization was performed using experimental and simulation results for Al2O3/MoOx and a-Si:H(i)/MoOx stacks to achieve high performance in p-type c-Si solar cells.

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Ultrathin SiO₂/Al₂O₃ passivation for silicon heterojunctions using rapid thermal annealing

Kim

Augusto

Bowden

et al. 2020

2020 47th IEEE Photovoltaic Specialists Conference (PVSC)

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Ultra thin Al₂O₃ passivation for hetero-junction Si solar cell

Cited by 4 publications

References 14 publications

Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells

Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells

Al₂O₃/MoO_x Hole-Selective Passivating Contact for Silicon Heterojunction Solar Cell

Ultrathin SiO₂/Al₂O₃ passivation for silicon heterojunctions using rapid thermal annealing

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Ultra thin Al2O3 passivation for hetero-junction Si solar cell

Cited by 4 publications

References 14 publications

Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells

Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells

Al2O3/MoOx Hole-Selective Passivating Contact for Silicon Heterojunction Solar Cell

Ultrathin SiO2/Al2O3 passivation for silicon heterojunctions using rapid thermal annealing

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Ultra thin Al₂O₃ passivation for hetero-junction Si solar cell

Al₂O₃/MoO_x Hole-Selective Passivating Contact for Silicon Heterojunction Solar Cell

Ultrathin SiO₂/Al₂O₃ passivation for silicon heterojunctions using rapid thermal annealing