Ultra-low values of the absorption coefficient for band–band transitions in moderately doped Si obtained from luminescence

Abstract

Correlation between the radiationinduced intrinsic 4.8 eV optical absorption and 1.9 eV photoluminescence bands in glassy SiO2Highly luminescent Eu3+ or Tb3+ doped and ZnO sensitized optical fibers drawn from silicon compatible sealing glasses Appl.

Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current

“…Three samples are used here, in which oxide thicknesses are 2.1, 2.8, and 3.4 nm. The impurity concentrations are N Dpoly ϭ1.0ϫ10 20 , 3.0ϫ10 20 , and 3.0ϫ10 20 cm Ϫ3 and N Asub ϭ1.5ϫ10 16 In a lower ͉V OX ͉ region, there is a clear difference between the complete and incomplete ionization results. Particularly, the incomplete ionization results have much better agreement in this region for all samples.…”

“…In this figure, the dotted line indicates the phosphorus ionization rate, the dashed line indicates BGN calculated under the assumption that the phosphorus is completely ionized, that is, Schenk's original result, and the solid line indicates the result calculated in the present model. In addition, the circle indicates optical BGN measured by the photoluminescence ͑PL͒ method, 15,16 which should be regarded as the most reliable optical measurement. 7 The box shows electrical BGN that Shigyo et al 17 regulated using the intrinsic carrier concentration revised by Green, 18 n i ϭ1.08ϫ10 10 cm Ϫ3 .…”

Models for numerical device simulations of crystalline silicon solar cells—a review

“…It was derived from measurements of the Si photoluminescence spectrum. According to Kirchhoff's law [165], the emissivity is directly related to the absorptivity, so a favorable side-effect of the experiment was the determination of the wavelength-dependent absorption coefficient for band-to-band transitions α bb [166,167], shown in Fig. 12.…”

On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation

“…Due to rich features contained in photoluminescence (PL) spectra from crystalline silicon (c-Si) wafers, photoluminescence spectroscopy (PLS) has been employed to study many fundamental properties of c-Si, such as the band gap at different temperatures [1] and doping levels [2,3], absorption coefficients [4][5][6][7], doping concentrations [8], or radiative recombination rates [6,9,10]. Recently, with the advent of micro-PLS tools equipped with confocal optics, it is feasible to pinpoint to micron-scale features in c-Si wafers and solar cells to study the luminescence properties of the material and defects [11][12][13][14][15], or to characterize devices [16][17][18][19].…”