Ultra-low temperature OMVPE of InAs and InAsBi

Y., K.; Fang, Zhen; Cohen, Ronald S.; Stringfellow, G. B.

doi:10.1007/bf02655829

Cited by 33 publications

(5 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nonetheless, the first MOCVD growth of InAsBi revealed a Bi concentration as high as 2.6%, far exceeding the theoretical value [25]. Using utra-low temperature MOCVD method, Ma et al achieved a Bi concentration up to 6.1% at 275 • C, the lowest temperature ever used for InAsBi growth [163]. Before 2012, InAsBi were all grown using MOCVD by two groups: from Oe's group in Japan and Stringfellow's group in USA [25,85], respectively.…”

Section: Inasbimentioning

confidence: 97%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

View full text Add to dashboard Cite

Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

show abstract

Section: Inasbimentioning

confidence: 97%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

View full text Add to dashboard Cite

show abstract

“…Oe et al 4) attempted to grow InSb 1Àx Bi x alloy by molecular beam epitaxy and confirmed that it can be epitaxially grown on InSb substrates. In the last decade, systematic research on the growth of InAs 1Àx Bi x and InAsSbBi alloys by metalorganic vapor phase epitaxy (MOVPE) 5,6) has been reported, confirming that MOVPE is highly suitable for growing thermally metastable alloys. Also, recently, a new material, GaInSbBi, has been grown on InSb substrates by molecular beam epitaxy.…”

Section: Introductionmentioning

confidence: 96%

Characteristics of Semiconductor Alloy GaAs_1-xBi_x

2002

Jpn. J. Appl. Phys.

149

View full text Add to dashboard Cite

The characteristics of GaAs 1Àx Bi x semiconductor alloy layers grown by metalorganic vapor phase epitaxy (MOVPE) have been studied. GaAs 1Àx Bi x epilayers were obtained on GaAs substrates. The lattice constants of the alloy were found to increase with the addition of Bi. The uniformity and the reproducibility of the solid composition of the GaAs 1Àx Bi x epilayers are good in spite of the difficulty of epitaxial growth. Although layer growth was performed at a low temperature (365 C), the stability of GaAs 1Àx Bi x alloy was sufficient for device processing, which was demonstrated by annealing in an arsenic atmosphere at 560 C for 30 min. The photoluminescence (PL) spectra show that the PL peak energy of the GaAs 1Àx Bi x alloy shifts to a longer wavelength with increasing Bi content. The temperature dependence of the PL peak energy is much weaker than the temperature variation of the band gap of GaAs; the temperature dependence of the PL peak energy of the GaAs 0:974 Bi 0:026 layer is less than one-third the temperature variation of the band gap of GaAs. The results obtained in this research support the hypothesis that III-V alloy semiconductors consisting of semiconductor and semimetal components have a temperature-insensitive band gap.

show abstract

“…III-V-Bi alloys comprise semiconductor and semi-metal components and as such are expected to possess a temperature-insensitive band gap. [1][2][3] This has led to the synthesis and investigation of InSbBi [4][5][6][7][8][9] and InAsBi [10][11][12][13] for applications in uncooled long wavelength infrared photodevices. In particular, InAsBi/InAs(100) pin diodes are candidates for temperature-insensitive-wavelength semiconductor detectors operating in the 4-12 m wavelength range.…”

mentioning

confidence: 99%

Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

Domínguez

Reyes

Bastiman

et al. 2013

Appl. Phys. Express

View full text Add to dashboard Cite

This work analyses the Bi incorporation in InAs1-xBix/InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350–400 °C resulted in Bi contents <3.3% exhibiting compositional variation in the growth direction. In contrast, roughly spherical clusters appeared in the sample grown at lower temperatures. The clusters are made up of the binary InBi with a tetragonal PbO phase surrounded by a matrix of InAs0.95Bi0.05 indicating the Bi solubility limit in InAs. These InBi crystals underwent a cubic distortion and are tilted 55° with regard to the InAsBi matrix. The crystallographic relationships are analysed in detail.

show abstract

Ultra-low temperature OMVPE of InAs and InAsBi

Cited by 33 publications

References 13 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Characteristics of Semiconductor Alloy GaAs_1-xBi_x

Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

Contact Info

Product

Resources

About

Ultra-low temperature OMVPE of InAs and InAsBi

Cited by 33 publications

References 13 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Characteristics of Semiconductor Alloy GaAs1-xBix

Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

Contact Info

Product

Resources

About

Characteristics of Semiconductor Alloy GaAs_1-xBi_x