Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator

Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Wenyue; Lü, Yangyang; Zhou, Peng; Min, Rui; Yu, Mingbin

doi:10.1364/oe.20.007081

Cited by 90 publications

(44 citation statements)

References 28 publications

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“…The first designs of this type were demonstrated in 2008 [21][22][23], and since then there have been numerous versions published with different variants in the design [24][25][26][27][28][29][30][31][33][34][35][36][37]. The most straightforward form of the device has the pn junction positioned in the waveguide equidistant from the rib edges [25][26][27][28][29][30][31][32]. Table 1 summarises the design parameters and performances of some example horizontal junction devices demonstrated recently.…”

Section: Chirpmentioning

confidence: 99%

“…If it is not practical to employ a DC block between the device and the termination, additional DC power consumption should be avoided by operating around zero volts with an RF drive amplitude which is low enough not to cause the device to go into the carrier injection regime. This approach has been followed by Ding et al where a power consumption of 146 fJ/bit was achieved [32]. The key in these devices is to use highly efficient phase modulators in order to produce a sufficient modulation depth with a lower drive voltage.…”

Section: Silicon Based Carrier Depletion Modulator For Short Reach Linksmentioning

confidence: 99%

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Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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Abstract:The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

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Section: Chirpmentioning

confidence: 99%

Section: Silicon Based Carrier Depletion Modulator For Short Reach Linksmentioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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“…Despite its large bandwidth, our device has a voltage-length product of V π L = 11 Vmm which very well competes with the best silicon-photonic modulators available today [10,19,20].…”

Section: Over 90 Ghz Bandwidth Phase Modulatorsmentioning

confidence: 95%

Silicon-organic hybrid devices

et al. 2013

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Silicon-organic hybrid (SOH) devices combine silicon waveguides with a number of specialized materials, ranging from third-order optically-nonlinear molecules to second-order nonlinear polymers and liquid-crystals. Second-order nonlinear materials allow building high-speed and low-voltage electro-optic modulators, which are key components for future silicon-based photonics transceivers. We report on a 90 GHz bandwidth phase modulator, and on a 56 Gbit/s QPSK experiment using an IQ Pockels effect modulator. By using liquid-crystal claddings instead, we show experimentally that phase shifters with record-low power consumption and ultra-low voltage-length product of V π L = 0.06 Vmm. Secondorder nonlinear materials, moreover, allow creating nonlinear waveguides for sum-or difference-frequency generation, and for lowest-noise optical parametric amplification. These processes are exploited for a large variety of applications, like in the emerging field of on-chip generation of mid-IR wavelengths, where pump powers are significantly smaller compared to equivalent devices using third-order nonlinear materials. In this work, we present the first SOH waveguide design suited for second-order nonlinear processes. We predict for our device an amplification of 14 dB/cm assuming a conservative χ (2) -nonlinearity of 230 pm/V and a CW pump power as low as 20 dBm.

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“…Proper RF design is critical to achieve good performance on TWMZ devices. With typical silicon p-n junctions and waveguide geometries of the phase shifter, 50 Ω device impedance is usually challenging to achieve due to the high junction capacitance per unit length; instead, TWMZ is often implemented at lower impedances (near 30 Ω for instance) [3]- [6]. In addition to creating reflections to driving circuitries, low device impedance incurs bandwidth penalty when terminated with standard 50 Ω impedance [7], [8].…”

Section: Introductionmentioning

confidence: 99%

High-Speed Silicon Modulator With Slow-Wave Electrodes and Fully Independent Differential Drive

Ding

Liu

et al. 2014

J. Lightwave Technol.

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Abstract-We demonstrate a fully independent differentialdrive capable of traveling-wave modulator in silicon using slowwave transmission line electrode. The reported 3.5-mm device achieves a bandwidth of 27 GHz at −1 V bias with 7.8-V small signal V π and 50-Ω impedance. Raising the impedance to this extent requires effectively expanding the RF mode size and radically changes the RF phase velocity, but we show that this can be done with minimal crosstalk effects between the two arms and overall velocity mismatch, and thus, with a high EO bandwidth achieved. 40-Gb/s operation is demonstrated with 1.6-V p p differential-drive, and performance comparisons to Lithium Niobate modulators are made.

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Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator

Cited by 90 publications

References 28 publications

Recent breakthroughs in carrier depletion based silicon optical modulators

Recent breakthroughs in carrier depletion based silicon optical modulators

Silicon-organic hybrid devices

High-Speed Silicon Modulator With Slow-Wave Electrodes and Fully Independent Differential Drive

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