Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

Abstract

We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz1∕2 and 20 aA/Hz1∕2, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.

Ultra-low noise HEMTs for deep cryogenic low-frequency and high-impedance readout electronics

“…Based on our early investigations [3], one lIi noise source in the HEMT at low temperature has been identified [4J. In this paper, we show that specially designed HEMTs can reach unprecedented low noise values at low frequencies and deep cryogenic conditions [5]. respectively.…”

“…respectively. Details of the characterization method can be found in [5]. A real FET is considered a noiseless transistor with two noise sources in its input, i.e., the noise-voltage en , which is the lowest noise level of a FET, and the noise-current in (see figure 1).…”

Status and Prospects of the EDELWEISS-III Direct WIMP Search Experiment

“…The ionization single electrodes baseline resolution is at ≈250 eV ee level (σ ). These resolutions can be improved down to 100 eV using HEMT (high electron mobility transistor [18]) technology for charge readout electronics. This work is in progress within EDELWEISS [19] and with other groups [20].…”

Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version

“…It has been made possible thanks to the constant performance improvement obtained by the CNRS/LPN laboratory [2] in their GaAs/GaAlAs High Electron Mobility Transistors (HEMTs) optimization for ultra-low noise at low frequency, down to 1.7 K (and even less) [3]. Today, the performances of these transistors reach and even exceed those of JFET, with the advantage of being able to work at much lower temperature, and so very closer to the detector.…”