Ultra-low noise and exceptional uniformity of SensL C-series SiPM sensors

Abstract

SensL C-Series Silicon Photomultiplier (SiPM) sensors are fabricated in a high-volume CMOS foundry to a custom SensL process, and packaged as a reflow solderable surface mount device. Advances in SiPM production have resulted in significant improvement in PDE, dark current as well as tighter breakdown voltage uniformity for the C-Series SiPM sensors. The SiPM are fabricated with a shallow P-on-N junction optimized for the detection of shorter wavelength photons, with a peak PDE of 41% at 420nm and excellent sensitivity extending to wavelengths <300nm. The dark currents have been reduced through the reduction of damage during semiconductor processing and an order of magnitude reduction has been achieved. The breakdown voltage variation has been improved through process optimization to minimize variations. With these process improvements typical dark count rates of ~30kHz/mm 2 are achieved simultaneously with breakdown voltage uniformity of ±213mV demonstrated. In addition, application specific measurements of CRT (Coincidence Resolving Time) that are relevant to PET (positron emission tomography) will be shown to be 210ps at 7.5V overvoltage. In addition to device characterization work, this paper will address the waferlevel fabrication and testing, package level testing required by high volume SiPM sensor applications.

BLOSM: Boron-based large-scale observation of soil moisture: First laboratory results of a cost-efficient neutron detector

“…Whenever a scintillation occurs and the emitted light escapes the layer, the light needs to get to the Silicon Photomultiplier sensor (SiPM) [5]. The light is faint and the SiPM is small (6 mm  6 mm) so wavelength-shifting fibers are used as a method of light transport.…”

Characterizing a Mini Gamma Detector

“…The instrument under development consists of a scintillator crystal for our system we use a BGO (6.3mmx6.3mmx6.3mm) for its property of being mechanically and chemically resistant in addition to not being hygroscopic, the crystal is shielded with a reflective layer to prevent light leaks, as a sensor we use a SiPM (6.1x6.1mm effective area) SensL MicroFC-60035-SMT [6], we designed a PCB with resistors and capacitors that have the function of filters to avoid noise in the signal, also inside the PCB is mounted the SiPM, we use a voltage source of 29V and an oscilloscope DPO-7054. The coupling of the scintillator to the SiPM is done with optical grease, this to ensure that the light generated in the crystal reaches the SiPM and prevent light losses collected by the crystal; to isolate the system from ambient light, we covered the system with a thick and dark commercial plastic tape, the entire instrument was contained in a hermetic box.…”

New frontiers in time-domain diffuse optics, a review

“…135 However, those effects are mainly due to the parasitic capacitance of the resistor terminal, 121 which is almost negligible when the resistor is integrated. [141][142][143] Indeed, during the last 3 years, SiPM started to be considered for CW diffuse optics prototypes 144,145 and last year, their use was also demonstrated in the TD regime, 146 mainly due to a targeted selection of high-performance devices and to the development of a compact and suitable electronic solution to maximize the timing resolution. 136,137 SiPMs were originally developed as photon-number resolving detectors exploiting their parallel structure that allows outputting a voltage pulse almost proportional to the number of photons simultaneously impinging onto the detector.…”