Ultra-low loss Si_3N_4 waveguides with low nonlinearity and high power handling capability

Tien, Ming-Chun; Bauters, Jared F.; Heck, Martijn J. R.; Blumenthal, D.J.; Bowers, John E.

doi:10.1364/oe.18.023562

Cited by 66 publications

(49 citation statements)

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“…The results are in agreement with [10], where nonlinearities of different core thicknesses were investigated. To determine the optimal waveguide length for the following nonlinear experiments, we simulated the FWM-based idler generation by solving the nonlinear Schrödinger equation (NLSE) with the split-step Fourier method.…”

supporting

confidence: 89%

“…This product of nonlinear coefficient γ, power level P, and effective length L eff must be maximized to achieve high FWM efficiency. As the nonlinear Kerr coefficient of Si 3 N 4 is one order of magnitude greater than the one in SiO 2 [10], a higher γ and a more efficient Kerr process is achieved in Si 3 N 4 . Although Si has even higher nonlinearities, the nonlinear losses originating from two-photon absorption (TPA) and free carrier absorption at telecom wavelengths limit the maximum power levels P that can be sent in this material.…”

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confidence: 99%

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Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides

et al. 2015

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Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguidesThis document has been downloaded from Chalmers Publication Library (CPL). It is the author´s version of a work that was accepted for publication in:Optics Letters (ISSN: 0146-9592) Citation for the published paper: Krückel, C. ; Torres Company, V. ; Andrekson, P. et al. (2015) "Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides". Optics Letters, vol. 40(6), pp. 875-878. In this Letter we introduce a complementary metal-oxide semiconductor (CMOS)-compatible low-loss Si 3 N 4 waveguide platform for nonlinear integrated optics. The waveguide has a moderate nonlinear coefficient of 285 W∕km, but the achieved propagation loss of only 0.06 dB∕cm and the ability to handle high optical power facilitate an optimal waveguide length for wavelength conversion. We observe a constant quadratic dependence of the four-wave mixing (FWM) process on the continuous-wave (CW) pump when operating in the C-band, which indicates that the waveguide has negligible high-power constraints owing to nonlinear losses. We achieve a conversion efficiency of −26.1 dB and idler power generation of −19.6 dBm. With these characteristics, we present for the first time, to the best of our knowledge, CW-pumped data conversion in a non-resonant Si 3 N 4 waveguide.

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Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides

et al. 2015

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“…However, the use of this platform as a nonlinear tool is still hindered by fabrication difficulties that prevent the possibility of growing thick SiN layers on SiO 2 (>200 nm) [24], thus drastically reducing the ability of confine light tightly within the core material, and in turn limiting the overall nonlinear response of the device. Moreover, the silicon nitride Kerr coefficient is substantially lower than that in silicon [64] (two orders of magnitude lower), further reducing the strength of the nonlinear effects. Recently, a number of research groups have proposed the use of silicon-enriched silicon nitride compounds, aiming to increase the device nonlinear response [59,[65][66][67][68].…”

Section: Engineered Silicon Rich Silicon Nitridementioning

confidence: 98%

Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

2017

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Abstract:In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK), Quadrature Phase Shift Keying (QPSK), 16-Quadrature Amplitude Modulation (QAM) and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

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“…This ultralow loss waveguide (ULLW) platform enables long delay lines, low-loss AWGs [81], high-Q ring resonators [82], and highextinction ratio waveguide polarizers [83]. Moreover, the low nonlinearity of SiO 2 and the relatively large mode sizes allow for high power handling [84].…”

Section: F Ultralow Loss Waveguides and Componentsmentioning

confidence: 99%

Hybrid Silicon Photonic Integrated Circuit Technology

Heck

Bauters

Davenport

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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Abstract-In this paper, we review the current status of the hybrid silicon photonic integration platform with emphasis on its prospects for increased integration complexity. The hybrid silicon platform is maturing fast as increasingly complex circuits are reported with tens of integrated components including on-chip lasers. It is shown that this platform is well positioned and holds great potential to address future needs for medium-scale photonic integrated circuits.

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Ultra-low loss Si_3N_4 waveguides with low nonlinearity and high power handling capability

Cited by 66 publications

References 11 publications

Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides

Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides

Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

Hybrid Silicon Photonic Integrated Circuit Technology

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