Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance

Goethals, Frederik; Ciofi, Ivan; Madia, Oreste; Vanstreels, Kris; Baklanov, Mikhaı̈l R.; Detavernier, Christophe; Voort, Pascal Van Der; Driessche, Isabel Van

doi:10.1039/c2jm30312d

Cited by 49 publications

(30 citation statements)

References 29 publications

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“…At this moment, several groups reported the papers related to PMO and low-k, in which the dielectric, mechanical and hydrophobic properties were studied. [66][67][68][69] Although there is some variation in the reported k-values of PMO films, the microelectronic industry recognized that PMOs are one of the most promising ultralow-k materials to integrate in actual devices. However, still a lot of future research is required, including plasma-damage effects, adhesion, electrical characteristics and reliability.…”

Section: Low-k Dielectrics For Future Technology Nodesmentioning

confidence: 99%

Mechanical Stability of Porous Low-k Dielectrics

Vanstreels

Baklanov

2014

ECS J. Solid State Sci. Technol.

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This paper reviews the mechanical and fracture properties of porous ultralow-k dielectrics with the focus on chip package interaction related issues. It is shown that the mechanical and fracture properties of porous ultralow-k dielectric films are closely linked with porosity, pore morphology, network structure and deposition technology, while their fracture properties are also sensitive to reactive species in the environment. The survivability of low-k dielectrics upon integration, package assembly and subsequent reliability tests is therefore a combination of their mechanical stability, fracture properties, the specific mechanical or thermo-mechanical load and environmental effects. For the past three decades, the semiconductor industry has been improving the performance of microelectronic devices and the functionality of advanced integrated circuits through the continuous scaling of integrated circuits and the maximization of transistor density.1 Consequently, this encourages the introduction of new materials, processes, chip designs, and packaging strategies into micro-/nano-electronic products. Among these material innovations are insulating materials with a dielectric constant (k) less than that of SiO 2 , so called low-k dielectrics. During the last 15 years, various materials and methods have been developed for fabricating low-k dielectric films, among which the plasma enhanced chemical vapor deposition (PECVD) technology of porous organosilicate glasses (OSG) is the most popular due to its better compatibility with the technological needs.2-5 The reduction in k for low-k dielectrics is being pursued through the introduction of controlled levels of porosity. However, finding a good low-k material has proven to be much more challenging than first expected due to a number of integration and reliability issues.1 Besides the need of being compatible with the different lithography, etching, stripping and cleaning processes that are used in state-of-the-art integration schemes, they must also have sufficient mechanical strength to withstand the high shear stresses as well as harsh chemical environments that are involved during the chemical mechanical polishing process without cohesive or adhesive failure occurring.6-8 On top of that, since low-k dielectrics exhibit intrinsic tensile stresses and have increased coefficients of thermal expansion compared to SiO 2 , thin film cracking and adhesion are serious thermal-mechanical reliability issues for low-k dielectric materials (Figure 1). 9,10 Thermo-mechanical deformation of the package during package assembly and subsequent reliability tests can induce large local stresses that can initiate and propagate cohesive and/or adhesive cracks in different back-end of line (BEOL) layers.11 Therefore, a careful characterization of the mechanical integrity of potential new low-k candidates is required to integrate these new materials and Cu interconnects and to assure reliability during chip packaging and under field conditions. In the microelectronics industry, the elas...

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Section: Low-k Dielectrics For Future Technology Nodesmentioning

confidence: 99%

Mechanical Stability of Porous Low-k Dielectrics

Vanstreels

Baklanov

2014

ECS J. Solid State Sci. Technol.

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“…The k-values for the films prepared from the cyclohexane derivatives were 2.5 and 2.0 for the samples calcined at 300 1C and 400 1C, respectively. 109 Van Driessche and co-workers 110 recently reported the chemical stability of ultra-low-k ring-PMO films synthesized using Brij-76 as a surfactant. The improved chemical resistance of the ring-PMOs prepared with Brij-76 was attributed to the presence of carbon bridges that are stable in alkaline media and to the thicker pore walls that can be obtained when using Brij surfactants rather than cetyltrimethylammonium chloride.…”

Section: Electronic Devices and Low-k Pmo Filmsmentioning

confidence: 99%

Periodic mesoporous organosilicas for advanced applications

2014

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In 1999, three groups independently developed a novel class of organic-inorganic nanocomposites known as periodic mesoporous organosilicas (PMOs). The organic functional groups in the frameworks of these solids allow tuning of the surface properties and modification of the bulk properties of the material. This paper provides a comprehensive overview of PMOs and discusses their different functionalities, morphology and applications, such as catalysis, drug delivery, sensing, optics, electronic devices, environmental applications (gas sensing and gas adsorption), biomolecule adsorption and chromatography for which PMOs have been used over the past 5 years.

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“…[6] However, according to the report established by ITRS in 2009, it is emergent to develop new ultra-low-κ materials with a state-of-the-art value ultimately lower than 2.0. [7] It is well known that these are two doable ways to reduce κ-value, decrease polarity and density. [1] First, decreasing polarity is for weaker dipole strength and less dipoles in essence, therefore some bonds with less polar, such as C-C and C-F, are used to replace higher polar.…”

Section: Introductionmentioning

confidence: 99%

Novel periodic mesoporous organosilica thin film with low dielectric constant and high mechanical property

Zhang

Sun

et al. 2016

2016 China Semiconductor Technology International Conference (CSTIC)

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A novel organosilane precursor, (hexfluoropropane-2,2-diyl)dibenzyl-bridged organosilane (HFPDBO) precursor, was prepared by a simple and facile synthesis. There are some superiorities designed in HFPDBO precursor, for instance, hexfluoro-substitutions and dibenzene can contribute to higher porosity and lower dielectric constant, rigid carbon bridged construction and tetrafunctional organosilane branches are beneficial to promoting polymerization and mechanical properties. Purified HFPDBO precursor were mixed with porogen Brij® L4, acid and ethanol for coating solution, and the HFPDBO-based PMO thin film was prepared via evaporation-induced self-assembly (EISA) method. The novel PMO thin film emerges excellent dielectric property (dielectric constants of 1.58@1 MHz) and high mechanical property (Young's modulus of 5.54±0.11 GPa), besides it shows order structure and hydrophobic property.

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Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance

Cited by 49 publications

References 29 publications

Mechanical Stability of Porous Low-k Dielectrics

Mechanical Stability of Porous Low-k Dielectrics

Periodic mesoporous organosilicas for advanced applications

Novel periodic mesoporous organosilica thin film with low dielectric constant and high mechanical property

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