The intermetallic magnesium diboride (MgB 2) superconductor compound has higher critical temperature (T c) of 39 K than the conventional low temperature superconductors [1]. It also offers advantages of larger coherence length (∼5 nm), absence of weak-link at the grain boundaries [2], cost-effectiveness [1] and almost an isotropic behaviour [3]. As a result, manufacturing MgB 2 wires with high critical current is of scientific interest for various engineering applications [4,5]. The effective process for producing nearly stoichiometric and dense MgB 2 wires is the internal magnesium diffusion (IMD) technique [6]. In the IMD technique, a solid magnesium (Mg) rod is surrounded by the boron powder, and the MgB 2 compound forms when Mg infiltrates into the boron (B) compacted powder [6]. The MgB 2 wires should be stabilized thermally by a highly conductive metal, and be able to provide the mechanical strength [7]. Cu is used as the outer stabilizing sheath for the commercially produced NbTi and Nb 3 Sn superconducting wires [8]. However, the Cu-sheathed MgB 2 composite wire produces a deleterious Cu 2 Mg layer at the MgB 2-Cu interface [9], and therefore the transport current density decreases [10]. Research demonstrates that the high thermal and electrical conductivity of Al can be put to use for an outer stabilizer sheath, and is mechanically reinforced too, when alloyed with ultrafine grained Al 2 O 3 [11]. It is important that the stabilizer sheath material does not react with the formed MgB 2 and produce any reaction layer which often can be non-superconductive, and as a result, the current carrying properties of the MgB 2 Comparison of interfacial and critical current behaviour of Al+Al 2 O 3 sheathed MgB 2 wires with Ta and Ti diffusion barriers S. Santra a, *