Ultra-High Upset, Megarad-Hard Si-Gate CMOS/SOS Code Generator

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

“…137 oxygen at 1000 °C for 2 hrs, resulting in a thickness of 700 Â. 214 The preceding discussion involves the effects of ionizing radiation on CMOS-SOS devices and how these effects can be influenced by various process sequences. Using an ion-implantation energy of 70 keV, the polysilicon is doped to a level of 1 x 10 16 /cm 2 with boron.…”