Ultra-high response ethanol sensors from fully-printed co-continuous and mesoporous tin oxide thin films

Devabharathi, Nehru; Parasuraman, Rajasekar; Umarji, A.M.; Dasgupta, Subho

doi:10.1016/j.jallcom.2021.158815

Cited by 9 publications

(7 citation statements)

References 52 publications

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“…In general, it offers a high surface‐to‐volume ratio and holds promise for applications in surface/interface‐dominated functional devices, such as supercapacitors, gas sensors, field‐effect transistors, fuel cells, photovoltaics, catalysis etc. [ 30–38 ]…”

Section: Resultsmentioning

confidence: 99%

“…In general, it offers a high surface-to-volume ratio and holds promise for applications in surface/interface-dominated functional devices, such as supercapacitors, gas sensors, field-effect transistors, fuel cells, photovoltaics, catalysis etc. [30][31][32][33][34][35][36][37][38] In the present study, we examined the advantages of such a In 2 O 3 mesoporous architecture in fabricating high-performance top-gate TFTs with edge-FET architecture. The non-standard device geometry involves printing of an additional metal layer (e.g., an inkjet-printed silver layer) on top of the mesoporous semiconductor channel.…”

Section: Resultsmentioning

confidence: 99%

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Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

Devabharathi

Pradhan

Priyadarsini

et al. 2022

Adv Materials Inter

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Significant developments have also been noted in the printed/flexible electronics domain, where the performance of solution-processed thin film transistors (TFTs) may now easily be compared with their vacuum deposited (e.g. sputtered or pulsed-laser deposited) counterparts. [6] Notably, these solutionprocessed devices are of high interest for a wide range of portable electronic or Internet of Things (IoT) related devices. However, any digital electronic component essentially requires complementary metal oxide semiconductor (CMOS) technology to ensure high noise immunity and low power consumption. [7] Unfortunately, it is only the oxygen deficient n-type oxide semiconductors, the performance of which nearly matches that of polycrystalline silicon, whereas the performance of the p-type materials is substantially lower in comparison. In fact, the problem associated with the absence of matching/comparable p-type oxide semiconductors range beyond the CMOS electronics to other p-n junction devices, for example, solar cells. Here, the transport properties of p-type oxide semiconductors are primarily limited by their highly localized oxygen 2p orbitals in the valence band maximum (VBM), deep VBM, rigorous environmental and fabrication conditions and difficulties in high-quality film formation. [8][9][10][11] It should also be noted that the examples of solutionprocessed p-type oxide semiconductors are essentially limited to NiO, Cu x O, SnO, and delafossite-type CuMO 2 (M = Al and Cr). [8][9][10][11] Among these, Cu x O has been the most promising candidate owing to its high theoretical Hall mobility, non-toxicity, suitable optical properties, and low cost. [12,13] Although it has been a well-known semiconductor even in the pre-silicon era, resurgent interest in Cu 2 O has been spurred when Matsuzaki et al. demonstrated a Hall mobility of 90 cm 2 V −1 s −1 for epitaxial Cu 2 O films on MgO in 2008. [14] The subsequent studies have reported about p-type Cu x O deposition via sputtering, [14] pulsed laser deposition [15,16] and thermal oxidation techniques. [17] Solution-based fabrication techniques involving either spin/spray coating or inkjet printing have also been reported. [15,[18][19][20][21][22][23] However, when it comes to Cu x O-based TFTs, the typical process temperatures (≥400 °C) or reported operating voltages have always been very high. [24][25][26] Oxide semiconductors are becoming the materials of choice for modern-day display industries. The performance of solution-processed oxide thin film transistors (TFTs) has also improved dramatically over the last few years. However, while oxygen deficient n-type semiconductors can demonstrate excellent electronic transport, the performance of p-type materials has remained unsatisfactory. Consequently, only the n-type semiconductor-based pseudo-complementary metal oxide semiconductor (CMOS) technology has attracted tremendous interests recently; yet, the high power dissipation remains a problem. Here, this work demonstrates all-oxide CMOS invertors with high-performa...

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

Devabharathi

Pradhan

Priyadarsini

et al. 2022

Adv Materials Inter

Self Cite

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“…The presence of toxic volatile organic compounds (VOCs) in the environment is one of the biggest threats to health. For the effective detection of these gases, many metal semiconductor oxides, such as ZnO, 1,2 Cu 2 O, 3 SnO 2 , 4,5 In 2 O 3 , 6−8 Co 3 O 4 , 9−11 and WO 3 12,13 gas-sensing materials, have attracted extensive attention. Among them, as a traditional n-type function semiconductor with a band gap of 3.37 eV, ZnO and ZnObased materials have excellent performance in gas-sensing measurements.…”

Section: Introductionmentioning

confidence: 99%

“…The presence of toxic volatile organic compounds (VOCs) in the environment is one of the biggest threats to health. For the effective detection of these gases, many metal semiconductor oxides, such as ZnO, , Cu 2 O, SnO 2 , , In 2 O 3 , − Co 3 O 4 , − and WO 3 , gas-sensing materials, have attracted extensive attention. Among them, as a traditional n-type function semiconductor with a band gap of 3.37 eV, ZnO and ZnO-based materials have excellent performance in gas-sensing measurements. − Especially, the modification of noble metals on the surface of sensing nanomaterials is an efficient method to enhance gas sensitivity, which can regulate the chemical distribution and nanomaterials’ electron occupancy.…”

Section: Introductionmentioning

confidence: 99%

Integration of ZnO and Au/ZnO Nanostructures into Gas Sensor Devices for Sensitive Ethanolamine Detection

Chao

Zhang

et al. 2023

ACS Appl. Nano Mater.

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Zinc oxide hollow microspheres (ZnO HMPs) were synthesized through a simple carbon microsphere-assistant soaking route following the annealed process. Configured as a resistor-type gas sensor, the as-synthesized HMP sensor exhibited good response to ethanolamine. After Au nanoparticles were loaded, the sensing performances of the Au-modified zinc oxide (Au/ZnO) products were dramatically increased. The experimental results indicate that a high response of 68.786 is measured under 100 ppm ethanolamine gas at an optimal operating temperature of 240 °C. Fast response time (13 s) and recovery time (24 s) to 500 ppb of gas phase ethanolamine at the operating temperature are recorded. The limit of ethanolamine detection was as low as 200 ppb. Additionally, the sensor device exhibited good selectivity and stability. Furthermore, the mechanism of the 2% Au/ZnO sensor performance is also discussed.

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“…31 Among all these catalysts, the metal oxides and their nanocomposites came into spotlight owing to their low band gap, non-toxicity, cost-effectiveness, high chemical stability, easy availability, and good electrical conductivity. 32,33 Currently, the mono metal oxides have been explored often for the sensing application, including, W 18 O 49 , 27 CuO, 34,35 SnO 2 , [36][37][38] ZnO, [39][40][41] In 2 O 3 42 a-NiMoO 4 , 43,44 ZrO, 45 NiO, 46,47 50,51 and CdO. 52 Amongst these transition metal oxides, NiO is a good electro-catalytic material for sensing applications of alcohol since it is p-type semiconducting material having good chemical/thermal stability and catalytic activity.…”

Section: Introductionmentioning

confidence: 99%

Highly dispersed Pd nanoparticles on NiO–CuO nanocomposite for efficient ethanol sensing

Bhangoji,

Suryavanshi,

Mane

et al. 2023

New J. Chem.

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Ultra-high response ethanol sensors from fully-printed co-continuous and mesoporous tin oxide thin films

Cited by 9 publications

References 52 publications

Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

Integration of ZnO and Au/ZnO Nanostructures into Gas Sensor Devices for Sensitive Ethanolamine Detection

Highly dispersed Pd nanoparticles on NiO–CuO nanocomposite for efficient ethanol sensing

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