Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers

Lü, Zhenguo; Liu, J.R.; Poole, Philip J.; Jiao, Zhejing; Barrios, Pedro; Poitras, Daniel; Caballero, J. A.; Zhang, X.P.

doi:10.1016/j.optcom.2010.11.083

Cited by 45 publications

(16 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…22(c). This is the smallest pulse width value reported on InAs/InP Qdots material system [11,144] without any external means. In addition, achievement of repetition rates as low as 10 GHz and as high as 100 GHz from 2.5×430 µ m 2 and 2.5×4300 µm 2 Qdot modelocked lasers, respectively, highlights the achievements of InAs/InP Qdot active media in mode locking.…”

Section: Self-pulsationmentioning

confidence: 71%

“…The resultant Qdots height increased from 4.5 nm to 5.6 nm, respectively, a direct result of continuous reduction of As/P exchange and consumption of surface-segregated In with GaAs layer thickness. Qdashes elongated along [0][1][2][3][4][5][6][7][8][9][10][11] were shown to emerge for GaAs layer smaller than 1ML, as depicted in Fig. 9(b), due to low group V flow, which changes the properties of the InGaAsP surface to cause anisotropic surface diffusion along [0-11] leading to Qdash formation for sub-monolayer GaAs coverage.…”

Section: Qdots On (100) Inp Substratementioning

confidence: 99%

“…Inset shows the optical intensity autocorrelation pulse trains w ith the periodic time of 20 ps, which corresponds to a repetition rate of 50 GHz. Courtesy from [11,140,144] …”

Section: Two Sectionmentioning

confidence: 99%

“…An ultrabroad gain profile of > 300 nm from Qdash active elements, as well as lasing and amplified spontaneous emission (ASE) bandwidths crossing more than 50 nm and 700 nm, respectively, from lasers and superluminescent diodes (SLD) are two examples of the recent significant developments in this field of study [5,8,9]. Broadband nature of the InAs/InP Qdot and Qdash laser diodes has been exploited to generate ultra-short femto-second pulses of 158 fs at 2.21THz based on the passive mode-locked scheme [10,11] which find important applications particularly in high speed optical time-domain multiplexer (OTDM), wavelength division multiplexed (WDM) communications, and optical clocking to replace electronic clocking in high-speed electronic circuits, such as a microprocessor.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

show abstract

Section: Self-pulsationmentioning

confidence: 71%

Section: Qdots On (100) Inp Substratementioning

confidence: 99%

“…Inset shows the optical intensity autocorrelation pulse trains w ith the periodic time of 20 ps, which corresponds to a repetition rate of 50 GHz. Courtesy from [11,140,144] …”

Section: Two Sectionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

show abstract

“…At a low temperature, the carriers are localized in the dots where they are first captured without carriers' transferring in different sizes of dots [7] . The broad gain due to the large non-uniformity of the QD is, therefore, spread out throughout the QD spectrum, and the lasing wavelength happens to the dots with similar size distribution in which they get enough initial gain; thus, multicolor emission becomes possible due to the non-uniform size distribution of QD [7,12,13] . However, when the applied current increased, the temperature in the active region is caused by heat increases due to the less uniform quantum efficiency (a fraction of input electric power is converted into heat in the active regions), which increases the loss in the active region.…”

mentioning

confidence: 99%

Low-temperature characteristics of two-color InAs/InP quantum dots laser

Li¹,

Gong²,

Wang³

et al. 2012

中国光学快报

View full text Add to dashboard Cite

We report on the lasing characteristics of a two-color InAs/InP quantum dots (QDs) laser at a low temperature. Two lasing peaks with a tunable gap are simultaneously observed. At a low temperature of 80 K, a tunable range greater than a 20-nm wavelength is demonstrated by varying the injection current from 30 to 500 mA. Under a special condition, we even observe three lasing peaks, which are in contrast to those observed at room temperature. The temperature coefficient of the lasing wavelength was obtained for the two colors in the 80−280 K temperature range, which is lower than that of the reference quantum well (QW) laser working in the same wavelength region.OCIS codes: 140.5960, 140.2020, 230.5590, 300.6360. doi: 10.3788/COL201210.041406. Self-organized quantum dot (QD) lasers have generated a huge amount of interest due to their δ-like quantum density of state and displayed unique optical and electrical properties that are different in character to those of the corresponding (QW) laser and bulk material laser [1] . In past years, good performances of QD lasers have been obtained in terms of a broad gain profile, low threshold current, high characteristic temperature, and high temperature wavelength stability [2−9] . The special features from the QD laser are naturally expected from their unique quantum structure providing extreme confinement for carriers, which results in multiple colors emitting simultaneously from a monolithic chip. Recently, at room temperature, a two-color emission from a monolithic chip of InAs/InP QD laser was reported as a result of the increase of an injection current [10,11] . The operation temperature was found to have an important effect on the performance of the two-color QD laser. At cryogenic temperatures, the QD lasers always display some special features different from those at room temperature. The obvious differences stem from the carriers' distribution in the non-uniform QD. At low temperatures, the carriers are always localized in the dots in which they are initially captured [12] . In the end, the laser performs some special characteristics as the injection current increases.In this letter, we carefully investigated the two-color features of an InAs/InP QD laser from a monolithic chip at a low temperature. Two peaks of lasing emission were observed simultaneously: The high energy peak underwent a continuous blue-shift with the increase of applied current while the low energy peak was somewhat fixed. A tunable range of greater than a 20-nm wavelength was obtained by adjusting the injection current from 30 to 500 mA. However, in the current range from 330 to 370 mA, we even obtained three-color lasing peaks simultaneously, which are in contrast to those observed at room temperature. At the same time, under a fixed injection current of 300 mA, the wavelength coefficients of 0.22 and 0.16 nm/K for the two colors in the temperature range of 80−280 K were obtained, which is better than that of 0.548 nm/K of the reference quantum well laser working in the same wavelength ...

show abstract

Advances in Mode-Locked Semiconductor Lasers

Avrutin

Rafailov

2012

Advances in Semiconductor Lasers

View full text Add to dashboard Cite

Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers

Cited by 45 publications

References 23 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Low-temperature characteristics of two-color InAs/InP quantum dots laser

Advances in Mode-Locked Semiconductor Lasers

Contact Info

Product

Resources

About