2022
DOI: 10.1364/prj.464650
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Ultra-high-linearity integrated lithium niobate electro-optic modulators

Abstract: Integrated lithium niobate (LN) photonics is a promising platform for future chip-scale microwave photonics systems owing to its unique electro-optic properties, low optical loss, and excellent scalability. A key enabler for such systems is a highly linear electro-optic modulator that could faithfully convert analog electrical signals into optical signals. In this work, we demonstrate a monolithic integrated LN modulator with an ultra-high spurious-free dynamic range (SFDR) of 120.04    dB … Show more

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Cited by 30 publications
(22 citation statements)
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“…Applications of MWP systems usually require ultra-high SFDR of beyond 120 dB Hz 2/3 15 . Although such a metric can be achieved through linearization of the modulator transfer function 37 40 , it remains challenging to achieve linearization simultaneously with functionalities. Here, we demonstrate simultaneous RF notch filter and linearization by using the combination of MT and DI-RR circuits in the same photonic chip.…”
Section: Resultsmentioning
confidence: 99%
“…Applications of MWP systems usually require ultra-high SFDR of beyond 120 dB Hz 2/3 15 . Although such a metric can be achieved through linearization of the modulator transfer function 37 40 , it remains challenging to achieve linearization simultaneously with functionalities. Here, we demonstrate simultaneous RF notch filter and linearization by using the combination of MT and DI-RR circuits in the same photonic chip.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, the linearity of LN modulators is excellent as the Pockels effect in LN is intrinsically linear. The highest spurious free dynamic range (SFDR) for modulators on LNOI is ∼120 dB·Hz, which is complemented using a ring-assisted Mach–Zehnder interferometer configuration …”
Section: Electro-optics With Lnoimentioning
confidence: 99%
“…Applications of MWP systems usually require ultra-high SFDR of beyond 120 dB Hz 2/315 . Although such a metric can be achieved through linearization of the modulator transfer function [37][38][39][40] , it remains challenging to achieve linearization simultaneously with functionalities. Here, we demonstrate simultaneous RF notch filter and linearization by using the combination of MT and DI-RR circuits in the same photonic chip.…”
Section: On-chip Linearization For Ultrahigh Dynamic Rangementioning
confidence: 99%