Ultra high density three dimensional capacitors based on Si nanowires array
          grown on a metal layer

Morel, P. H.; Haberfehlner, Georg; Lafond, D.; Audoit, G.; Jousseaume, V.; Leroux, C.; Fayolle-Lecocq, M.; Baron, T.; Ernst, T.

doi:10.1063/1.4746762

Cited by 25 publications

(18 citation statements)

References 23 publications

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“…Routes to increase the capacitance density of solid‐state microcapacitors include the increase in the dielectric permittivity of the insulator (use of high‐ k dielectrics), the decrease in the oxide thickness, and the increase in microcapacitor surface area. One way to increase the effective electrode area without increasing the footprint area of the device is by 3D nanostructuring of the electrodes . Another approach reported in the literature is the use of stacks of MIM capacitors on a 3D‐structured Si substrate as a means to increase the total capacitance areal density …”

Section: On‐chip Microcapacitors For Energy Storagementioning

confidence: 99%

“…They are both based on the parallel‐plate capacitor configuration with 3D‐structured electrodes. In the first approach, shown in Figure a, a 3D‐structured substrate is used which is either a semiconductor or a metal, on which the dielectric and top electrode are deposited, following its morphology . The capacitors have thus either the MIS or MIM configuration.…”

Section: On‐chip Microcapacitors For Energy Storagementioning

confidence: 99%

See 1 more Smart Citation

Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress

Hourdakis

Nassiopoulou

2020

Physica Status Solidi (a)

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Autonomous sensor systems and networks are of increasing demand toward the realization of the Internet of Things (IoT). In this respect, integrated devices for energy storage and management, such as microcapacitors and microbatteries, are intensively studied. Their integration with Si electronics is highly desirable, as it offers important advantages related to fabrication simplicity and cost reduction. Moreover, microcapacitors as compared with microbatteries offer additional advantages, including a theoretically infinite number of charge/discharge cycles, which makes them more appropriate for truly autonomous systems. They thus constitute the focus herein. Their basic characteristics for use in energy storage are discussed, and their interdependence is demonstrated, along with the demonstration that those characteristics cannot be independently optimized for energy storage. The two types of existing microcapacitors, namely the solid‐state microcapacitors and the microsupercapacitors, are presented in terms of their fabrication and integration schemes and their energy‐storage characteristics. Their advantages and disadvantages for the specific applications are analyzed. The usefulness of solid‐state microcapacitors in the above application, despite their significantly lower capacitance density compared with microsupercapacitors, is demonstrated, attributed to their integration maturity with standard complimentary metal‐oxide‐semiconductor (CMOS) processing, in addition to their larger charging voltages and maximum frequencies of operation.

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Section: On‐chip Microcapacitors For Energy Storagementioning

confidence: 99%

Section: On‐chip Microcapacitors For Energy Storagementioning

confidence: 99%

Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress

Hourdakis

Nassiopoulou

2020

Physica Status Solidi (a)

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“…We studied an industrially relevant metal/substrate combination, Cu on TiN, as TiN is known to be an efficient diffusion barrier widely used in Cu interconnections in Si chips. We further investigated the use of these nanoparticles in Si nanowires (SiNWs) growth in CMOS compatible conditions (< 450 °C), as they are promising building blocks for nanoscaled microelectronic devices, for instance to prepare high surface area capacitors in interconnections . SiNWs were grown by Catalytic Chemical Vapor Deposition (C‐CVD) using the Vapor‐Solid‐Solid mechanism, in which a metallic nanoparticle acts as a catalyst for Si precursor decomposition, as well as a template for nanowire formation, the nanoparticle diameter controlling the nanowire diameter …”

Section: Introductionmentioning

confidence: 99%

Cu Nanoparticles on TiN by Electroless Deposition: Surface‐Mediated Diameter Control and Application to Si Nanowires Growth

Roussey

Martínez

Copéret

et al. 2017

Helvetica Chimica Acta

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Cu Nanoparticles on TiN coated silicon substrates were prepared from well‐defined molecular precursors [CuOtBu]4 in non‐aqueous solutions. The formation of nanoparticles takes place via galvanic displacement and allows for the formation of narrowly distributed Cu nanoparticles with controlled size ranging from 8 to 35 nm through the control of the oxidation state of the TiN surface. The activity of these nanoparticles arrays in low temperature Si nanowires growth by the vapor‐solid‐solid mechanism was also investigated and larger Cu nanoparticles were found to yield higher Si nanowires density.

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“…Therefore, 3D nanocapacitor arrays with a high aspect ratio are considered to be a robust candidate to achieve a high capacitance density. To date, many methods have been proposed for the fabrication of 3D nanocapacitors, mainly focusing on different nanostructured templates such as anodic aluminum oxide (AAO) [ 5 – 11 ], carbon nanotubes (CNTs) [ 12 , 13 ], silicon-based nanowires, nanoholes and nanopillars [ 14 – 18 ], and InAs nanowires [ 19 ]. The AAO template has been widely used because nanopore arrays exhibit a high degree of regularity and uniformity.…”

Section: Introductionmentioning

confidence: 99%

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage

et al. 2016

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Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm2 at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10−8 A/cm2 at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

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Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer

Cited by 25 publications

References 23 publications

Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress

Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress

Cu Nanoparticles on TiN by Electroless Deposition: Surface‐Mediated Diameter Control and Application to Si Nanowires Growth

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage

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