Ultra-high density, thin core and low loss organic system-on-package (SOP) substrate technology for mobile applications

Liu, Fuhan; Sundaram, Venky; Chan, Hunter; Krishnan, Ganesh; Shang, Jintang; Dobrick, J.; Neill, J.M.; Baars, D.; Kennedy, S. R.; Tummala, Rao

doi:10.1109/ectc.2009.5074076

Cited by 21 publications

(5 citation statements)

References 1 publication

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“…The details of substrate material properties, fabrication process and reliability results can be found in the article by Fuhan et al [7]. Similar to TV2 dies, the substrate Cu structures were also coated with ENIG to prevent oxidation as shown in Fig.…”

Section: ) Tv2 Die and Substrate Fabricationmentioning

confidence: 99%

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Highly Reliable and Manufacturable Ultrafine Pitch Cu–Cu Interconnections for Chip-Last Embedding With Chip-First Benefits

Kumbhat

Choudhury

Mehrotra

et al. 2012

IEEE Trans. Compon., Packag. Manufact. Technol.

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Flip-chip packaging of Ultrafine pitch integrated circuits aggravates the stress-strain concerns as the interconnection pitch is decreased, requiring a fundamentally different system approach to interconnections, underfill processes and interfaces, and the substrate. This paper demonstrates an innovative and manufacturable solution to achieve excellent reliability at Ultrafine pitch (∼30 µm) using direct copper-copper (Cu-Cu) interconnections with adhesives. A number of 30-µm bump pitch test vehicles (TVs) were designed with 3 mm × 3 mm chips to extract both daisy chain resistance and singlebump resistance data. Assembled bump resistivity was found to be ∼3-4× lower than most solders. Performance of these TVs was studied for high temperature storage (HTS) life test, unbiased-highly accelerated stress test (U-HAST) and thermal cycling test (TCT). Test results showed that the assemblies with this next generation interconnection technology depicted excellent reliability results in HTS, U-HAST, and TCT tests. Based on these results, it is concluded that adhesive materials, provide unique opportunities for Ultrafine pitch and high performance interconnections.

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Section: ) Tv2 Die and Substrate Fabricationmentioning

confidence: 99%

“…Fig. 2 shows a schematic of full integration test vehicle (TV) for this program, the interconnection portion of which will be discussed in this paper and substrate portion is discussed in Fuhan et al [7]. Fig.…”

Section: Introductionmentioning

confidence: 99%

Highly Reliable and Manufacturable Ultrafine Pitch Cu–Cu Interconnections for Chip-Last Embedding With Chip-First Benefits

Kumbhat

Choudhury

Mehrotra

et al. 2012

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…Two new dielectric materials [5], RXP-1 (core) and RXP-4 (build-up) in the RXP material system were used for embedding high Q RF passives and ICs by chip-last method. RXP-1 is a glassreinforced high Tg (>300 0 C), medium-CTE (10-15ppm/°C), and low-moisture uptake (<0.1%) laminate core in the thickness range of 50-110um.…”

Section: ) Core and Build-up Substratementioning

confidence: 99%

Chip-last Embedded Actives and Passives in Ultra-Miniaturized Organic Packages with Chip-First Benefits

Kumbhat

Liu

Sridharan

et al. 2010

International Symposium on Microelectronics

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Embedded actives and passives are being pursued by chip-first and wafer-level fan-out approaches to address high functionality and miniaturization. A next generation embedding alternative- “chip-last embedding”, which retains all the benefits of chip-first, has been demonstrated at Georgia Tech for complex multi-component heterogeneous systems. This paper presents detailed results from the first demonstration of this novel technology called Embedded MEMS, Actives and Passives (EMAP) with Chip-Last (CL) interconnections. This technology is targeted at highly integrated modules and systems with multiple 2D and 3D ICs for RF, Digital, Analog, MEMS and passive devices. Ultra-thin (55μm) silicon test dies were embedded in a 60μm deep cavity within 6-metal layer substrates yielding a total module thickness of 0.22mm. The robustness of substrate materials and processes was demonstrated using thermal cycling of the blind-vias and through-holes. The embedded IC was bonded to the substrate at 160°C by ultra-fine pitch (30–50μm) and low-profile (10–15μm) Cu-to-Cu interconnections with polymer adhesives. Two different die-sizes 3mm × 3mm and 7mm × 7mm were investigated for reliability performance of these interconnections, which passed 1000 thermal cycles, in addition to Highly Accelerated Stress Test (HAST) and High Temperature Storage Test (HTS). Comprehensive analysis of new materials and processes used in the chip-last embedding technology has been carried out demonstrating the advantages and robustness of this promising technology. Due to manufacturing process simplicity and unparalleled set of benefits, the chip-last technology provides the benefits of chip-first while enabling highly miniaturized, multi-band, high performance modules with embedded actives and passives.

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“…Recently, low loss organic substrates have been reported for wireless applications [1], [2]. However, they can not replace LTCC, because their dielectric constants are low (Dk=2.5-3.25).…”

Section: Introductionmentioning

confidence: 99%

High performance organic substrate with high dielectric constant, low loss, and low temperature coefficient of resonant frequency for high frequency RF module applications

Kojima¹,

Shiga²,

Matsuo³

et al. 2011

2011 IEEE Radio and Wireless Symposium

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In this paper we present a thin organic resin substrate material (called X-R) for RF modules and high frequency devices, which has a very low insertion loss property. The X-R material possesses the same dielectric constant (Dk=7.0) and the same loss (Df=0.003) as LTCC, and shows low TCF (temperature coefficient of resonant frequency) (5.9ppm/deg. C at 1GHz). We have proven that embedded band-pass filter based on the X-R shows very low insertion loss (S21) performance, which is promising for RF modules and high frequency devicesIndex Terms -Organic Substrate, High Dielectric Constant, Band Pass Filter, Temperature Coefficient of Resonant Frequency, RF Module, High Frequency.

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Ultra-high density, thin core and low loss organic system-on-package (SOP) substrate technology for mobile applications

Cited by 21 publications

References 1 publication

Highly Reliable and Manufacturable Ultrafine Pitch Cu–Cu Interconnections for Chip-Last Embedding With Chip-First Benefits

Highly Reliable and Manufacturable Ultrafine Pitch Cu–Cu Interconnections for Chip-Last Embedding With Chip-First Benefits

Chip-last Embedded Actives and Passives in Ultra-Miniaturized Organic Packages with Chip-First Benefits

High performance organic substrate with high dielectric constant, low loss, and low temperature coefficient of resonant frequency for high frequency RF module applications

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