Ultra High Density HfO2 Nanodots Memory for Scaling

Wakai, Hironori; Kobayashi, M.; Kumise, Takaaki; Yamaguchi, Masaomi; Nakanishi, Takafumi; Tanaka, Hitoshi

doi:10.1109/.2006.1629493

Cited by 3 publications

(1 citation statement)

References 1 publication

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“…However, previous approaches for charge trapping in the OTFD have used CPs as a continuous charge-trapping layer to replace the floating gate in NVMs [12]. Although some studies have investigated the integration of solution-processed NPs into OTFDs to mimic the charge-trapping mechanisms used in nanoscale solid-state devices that employ NPs, the challenge arises due to incompatibility with traditional CMOS processes [15][16][17][18][19][20][21][22][23]…”

Section: Introductionmentioning

confidence: 99%

Nano-Scale Charge Trapping Memory based on Two-Dimensional Conjugated Microporous Polymer

Nayfeh

Rezk

Ansari

et al. 2023

Preprint

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There is a growing interest in new semiconductor nanostructures for future high-density high-performance flexible electronic devices. Two-dimensional conjugated microporous polymers (2D-CMPs) are promising candidates because of their inherent optoelectronic properties. Here, we are reporting a novel donor-acceptor type 2D-CMP based on Pyrene and Isoindigo (PI) for a potential nano-scale charge-trapping memory application. We exfoliated the PI polymer into ~ 2.5 nm thick nanoparticles (NPs) and fabricated a Metal-Insulator-Semiconductor (MIS) device with PI-NPs embedded in the insulator. Conductive AFM (cAFM) is used to examine the confinement mechanism as well as the local charge injection process, where ultrathin high-κ alumina supplied the energy barrier for confining the charge carrier transport. We have achieved a reproducible on-and-off state and a wide memory window (ΔV) of 1.5 V at a relatively small reading voltage. Furthermore, a theoretical analysis is developed to affirm the measured charge carriers’ transport and entrapment mechanisms through and within the fabricated MIS structures. The PI-NPs act as a nanoscale floating gate in the MIS-based memory with deep trapping sites for the charged carriers. Moreover, our results demonstrate that the synthesized 2D-CMP can be promising for future low-power high-density memory applications.

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Section: Introductionmentioning

confidence: 99%

Nano-Scale Charge Trapping Memory based on Two-Dimensional Conjugated Microporous Polymer

Nayfeh

Rezk

Ansari

et al. 2023

Preprint

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Observation of Negative Charge Trapping and Investigation of Its Physicochemical Origin in Newly Synthesized Poly(tetraphenyl)silole Siloxane Thin Films

et al. 2011

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A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane, was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings were responsible for negative charge trapping, while the Si-O-Si inorganic linkages provided the intrachain energy barrier for controlling electron transport. The polysilole siloxane dielectric thin films were fabricated by spin-coating and curing of the polymers, followed by characterization with spectroscopic ellipsometry (SE), near edge X-ray absorption fine structure spectroscopy (NEXAFS), and photoemission spectroscopy (PES). The abrupt increase in density and decrease in thickness of the thin film at a curing temperature of 100 °C was attributed to a thermodynamically preferred state in the nanoscopic arrangement of the polymer chains; this was due to cofacial π-π interactions in a skewed manner between peripheral phenyl groups of the (tetraphenyl)silole rings of the adjacent polymer chains. Using the NEXAFS spectrum to assess high electron affinity, the LUMO energy level of the dielectric thin film cured at 150 °C was positioned 1 eV above the Fermi energy level (E(F)). The electron trapping of the dielectric thin films was confirmed from the positive flat band shift (ΔV(FB)) in the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure, which strongly verified the polymer design concept. From the simple kinetics model of the electron transport, it was proposed that the flat band shift (ΔV(FB)) or trap density of the negative charges (|ρ|) was logarithmically proportional to the decay constant (β) for the electron-tunneling process. When a phenyl group of a silole ring in a polymer chain was inserted into the two available phenyl groups of another silole ring in another polymer chain, the electron transfer between the groups was enhanced, decreasing the trap density of the negative charges (|ρ|). For the thermodynamically preferred state generating the high refractive index, the distance between the two phenyl groups of the adjacent polymer chains was estimated to be in the range of 0.27-0.36 nm.

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Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer

Rezk,

Ansari,

Ranjeesh

et al. 2023

Sci Rep

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There is a growing interest in new semiconductor nanostructures for future high-density high-performance flexible electronic devices. Two-dimensional conjugated microporous polymers (2D-CMPs) are promising candidates because of their inherent optoelectronic properties. Here, we are reporting a novel donor–acceptor type 2D-CMP based on Pyrene and Isoindigo (PI) for a potential nano-scale charge-trapping memory application. We exfoliated the PI polymer into ~ 2.5 nm thick nanoparticles (NPs) and fabricated a Metal–Insulator–Semiconductor (MIS) device with PI–NPs embedded in the insulator. Conductive AFM (cAFM) is used to examine the confinement mechanism as well as the local charge injection process, where ultrathin high-κ alumina supplied the energy barrier for confining the charge carrier transport. We have achieved a reproducible on-and-off state and a wide memory window (ΔV) of 1.5 V at a relatively small reading current. The device displays a low operation voltage (V < 1 V), with good retention (104 s), and endurance (103 cycles). Furthermore, a theoretical analysis is developed to affirm the measured charge carriers’ transport and entrapment mechanisms through and within the fabricated MIS structures. The PI–NPs act as a nanoscale floating gate in the MIS-based memory with deep trapping sites for the charged carriers. Moreover, our results demonstrate that the synthesized 2D-CMP can be promising for future low-power high-density memory applications.

show abstract

Ultra High Density HfO2 Nanodots Memory for Scaling

Cited by 3 publications

References 1 publication

Nano-Scale Charge Trapping Memory based on Two-Dimensional Conjugated Microporous Polymer

Nano-Scale Charge Trapping Memory based on Two-Dimensional Conjugated Microporous Polymer

Observation of Negative Charge Trapping and Investigation of Its Physicochemical Origin in Newly Synthesized Poly(tetraphenyl)silole Siloxane Thin Films

Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer

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