Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Song, Yi; Mohseni, Parsian K.; Kim, Seung Hyun; Shin, Jae Cheol; Ishihara, Tatsumi; Adesida, I.; Li, Xiuling

doi:10.1109/led.2016.2577046

Cited by 35 publications

(48 citation statements)

References 22 publications

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“…Based on the etch rate decrease with increasing stripe width, they suggested that the transport of reactants and products under the metal influences the etch rate and profile. When MT was inhibited presumbaly by unsoluble oxide beneath the metal catalyst in the case of InP, only inverse‐MacEtch took place . Even more challenging but imperative for applications in modern electronics, one must understand and be able to control the CG and MT processes at the scale of 100 nm or less.…”

Section: Introductionmentioning

confidence: 99%

Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

Kim

Mohseni

Balasundaram

et al. 2017

Adv Funct Materials

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Metal-assisted chemical etching (MacEtch) has shown tremendous success as an anisotropic wet etching method to produce ultrahigh aspect ratio semiconductor nanowire arrays, where a metal mesh pattern serves as the catalyst. However, producing vertical via arrays using MacEtch, which requires a pattern of discrete metal disks as the catalyst, has often been challenging because of the detouring of individual catalyst disks off the vertical path while descending, especially at submicron scales. Here, the realization of ordered, vertical, and high aspect ratio silicon via arrays by MacEtch is reported, with diameters scaled from 900 all the way down to sub-100 nm. Systematic variation of the diameter and pitch of the metal catalyst pattern and the etching solution composition allows the extraction of a physical model that, for the first time, clearly reveals the roles of the two fundamental kinetic mechanisms in MacEtch, carrier generation and mass transport. Ordered submicron diameter silicon via arrays with record aspect ratio are produced, which can directly impact the through-silicon-via technology, high density storage, photonic crystal membrane, and other related applications.

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Section: Introductionmentioning

confidence: 99%

Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

Kim

Mohseni

Balasundaram

et al. 2017

Adv Funct Materials

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“…has become increasingly difficult and does not give any performance improvement. In recent years, much attention has been paid to III-V n-MOSFET, such as InP [1], InxGa1-xAs [2] and InAs [3] materials, due to their superior electron mobility and potential to enhance device performances. With In content enrichment, the injection velocity of InxGa1-xAs increases continuously rendering an attractive InAs channel material for n-MOSFET with an injection velocity of ~4×10 7 cm/s.…”

mentioning

confidence: 99%

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

Zeng

Khandelwal

Shariar

et al. 2019

IEEE Trans. Electron Devices

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In this paper, post superacid (SA) treatment was for the first time proposed to enhance the performance of InAs FinFETs on SiO2/Si substrate. Typically, the subthreshold swing (SS) has reduced from 217 mV/dec to 170 mV/dec and transconductance (gm) has increased from 6.44 μS/μm to 26.5 μS/μm after SA treatment, respectively. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to strong protonating nature of SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates the carrier mobility is enhanced by 5.8~7.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

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“…The MaCE can also be applied to semiconductors other than Si, such as Ge, [146][147][148] GaAs, [149][150][151][152][153][154][155][156][157][158][159][160][161][162][163][164] Al x Ga 1−x As, [165] GaN, [166,167] GaP, [168] InP, [169][170][171][172] SiC, [173,174] and Ga 2 O 3 [175] to fabricate various nanostructures. These compound semiconductors find widespread applications in electronics, optoelectronics, and photovoltaics, etc.…”

Section: Mace Of Semiconductors Other Than Simentioning

confidence: 99%

“…In addition to UV illumination, [156,175] the type of MaCE, either forward or inverse, can be controlled by temperature, [151,154] metal shape such as isolated disc or interconnected mesh, [147,168] or inert oxide formation at the interface between metal and semiconductor. [171,172] The etch temperature affects the etch rate, or the consumption rate of injected h + . When the consumption rate is rather low (at relatively low etching temperature) compared to its injection rate, the h + can diffuse far away to the non-metal area.…”

Section: Mace Of Semiconductors Other Than Simentioning

confidence: 99%

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Srivastava

Khang

2021

Advanced Materials

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classified into two common approaches: bottom-up chemical synthesis, such as vapor-liquid-solid growth, [16][17][18][19][20] and topdown fabrication schemes. [21][22][23] This review will focus on the top-down fabrication of Si structures using a wet chemical etching technique aided with a metal catalyst, called metal-assisted chemical etching (MaCE). [24][25][26][27][28][29][30][31][32] In comparison with top down fabrication methods based on dry etching using a reactive plasma in vacuum, MaCE is less expensive and less complex. [33][34][35] MaCE is a nano-scale reductionoxidation (redox) process that usually occurs in aqueous solution where the sample to be etched is in contact with the etchant. MaCE is a simple, cost-effective, and versatile method to produce Si nanostructures; due to these attractive features, there have been many good review articles published on the process. [36][37][38][39][40][41][42] With two-decades of research of the MaCE and its innovative variations, recent studies have focused on the various applications of Si nanostructures prepared by MaCE, including photovoltaics, [43,44] thermoelectrics and piezoelectric nanogenerators, [45] energy storage, [46][47][48] nanophotonics and optoelectronics, [49] and biosensors and biomedical applications. [50][51][52] In this review, we provide an overview of the recent advances in MaCE processes and their novel applications. To differentiate this review from previous review articles, the main emphasis is on the recently developed novel MaCE processes and the macroscale structuring of Si by MaCE. We begin the review by describing new MaCE processes, particularly catalysts for MaCE. In contrast to well-known noble metal catalysts, such as Ag, Au, and Pt, carbon-based catalysts, such as graphene, graphene oxide, and carbon nanotubes, have been successfully applied as catalysts for MaCE. In addition, TiN has been found to be a catalyst for MaCE, making the whole process CMOS-compatible. Different types of etch additives, such as various alcohols and chlorides, have also been discussed, which enhance etch uniformity by increasing the wettability of etchants and suppressing the random diffusion of excessive (holes) h + by trapping them for better etch control. Recent novel variations of the MaCE process have been introduced, such as MaCE with externally applied electric or magnetic fields. The external field has a profound effect on the output of MaCE, by controlling the etch directionality and etch rate. In addition, MaCE can be combined with unconventional patterning techniques, StructuringSi, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal-assisted chemical etching (MaCE) has been developed as a simple, low-cost, and scalable method to produce structures across widely different dimensions. The process involves various parameters, such as catalyst, substrate doping type and level, crystallography, etchant formulation, and etch additives. Careful optimization of these parameters is the key to the succe...

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Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Cited by 35 publications

References 22 publications

Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

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